Renesas Electronics has introduced low on-state resistance mosfets which are optimised for use as ORing FETs in power supplies.
The on-state resistance is 0.72mΩ (typical value) for 30V. This is about 50% lower resistance compared to Renesas’ earlier mosfets in a surface mount package (8-pin HVSON).
The 8-pin HVSON package is designed for low resistance because a metal plate is used to connect the FET die within the package to the pins.
This, combined with the low on-state resistance of the FET die, allows for large-current control rated at 130A (ID (DC)).
It is also designed to use of the minimum number of parallel connections when multiple ORing FETs are connected in parallel to each of the power supply units in order to supply a large current.
The three new mosfets, including the μPA2766T1A, have on-state resistance ratings ranging from 0.72mΩ to 1.05mΩ (standard value).
Samples of the new low on-state resistance power mosfet products are available now. Mass production of the new products is scheduled to begin in February 2013.
Source:
http://www.electronicsweekly.com/Articles/2013/01/24/55433/renesas-cuts-on-resistance-of-oring-mosfets-by-50.htm
