3 September 2012 EPC releases safe operating area data for its eGaN FETs
Efficient Power Conversion Corp(EPC)of El Segundo,CA,USA,which makes enhancement-mode gallium nitride on silicon(eGaN)power field-effect transistors(FETs)used in power management applications,is releasing safe operating area(SOA)data for its eGaN FETs.The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature,says the firm.
SOA is an indicator of the device's ability to transfer heat away from a resistive junction.The more efficient a device is at getting rid of generated heat,the lower thermal resistance and the better the SOA performance.
An application note presenting the SOA for EPC eGaN FETs is available at:http://epc-co.com/epc/documents/product training/SafeOperatingArea.
EPC is in the process of updating each of its product data sheets to include SOA performance curves.
