MwT Would Make Microwave Devices

MicroWave Technology Inc (MwT) of Fremont, CA, USA, a subsidiary of IXYS Corp that makes microwave devices, MMICs, modules and subsystems for wireless communication infrastructure, defense, industrial and medical equipment applications, has introduced two GaAs/AlGaAs pHEMT-based Monolithic Microwave Integrated Circuit (MMIC) products, targeted at the Ku-band and Ka-band high data rate VSAT power amplifier and other applications.

• MMA-121633-R5 (Ku-band MMIC power amplifier) operates between 12 and 16GHz. It offers 32dBm (1.6W) of output power at a 1dB gain compression point and nearly 35dBm (3W) and 22dBm of output power at a 3dB gain compression point between 13-14GHz. The typical small signal gain is 23dB. The Third Order Intermodulation (IM3) level is -44dBc at 20dBm output power per tune. The DC bias conditions for this part are 6V and 1.4A on the drain and -0.9V on the gate.

• MMA-283136-R5 (Ka-band MMIC power amplifier) operates between 28 and 33GHz. It provides 35dBm (over 3W) of output power at a 1dB gain compression point and 36dBm (4W) of output power at a 3dB gain compression point.

"Leveraging our deep knowledge and long history of supplying pHEMT based microwave/RF devices and amplifiers for wide range applications, we have successfully developed the Ku-band and Ka-band high power amplifiers as new additions to our MMIC products family," said Dr Greg Zhou, general manager of MwT. "The applications of these two MMIC products include VSAT, point-to-point microwave links for high-data-rate communications, military and space, and other applications. The exceptional power level from the MMA-283136-R5 exceeds the output power specification demanded by today's emerging Ka-band (30GHz) VSAT high data rate applications." 

Both MMIC power amplifiers are fully matched for input and output terminals for easy cascade and are packaged in the R5 (5mm x 5mm) surface-mount package. Evaluation boards for power amplifiers in R5 packages are available now.

Tags: MwT MMICs GaAs/AlGaAs pHEMTMicroWave Technology Inc (MwT) of Fremont, CA, USA, a subsidiary of IXYS Corp that makes microwave devices, MMICs, modules and subsystems for wireless communication infrastructure, defense, industrial and medical equipment applications, has introduced two GaAs/AlGaAs pHEMT-based Monolithic Microwave Integrated Circuit (MMIC) products, targeted at the Ku-band and Ka-band high data rate VSAT power amplifier and other applications.

• MMA-121633-R5 (Ku-band MMIC power amplifier) operates between 12 and 16GHz. It offers 32dBm (1.6W) of output power at a 1dB gain compression point and nearly 35dBm (3W) and 22dBm of output power at a 3dB gain compression point between 13-14GHz. The typical small signal gain is 23dB. The Third Order Intermodulation (IM3) level is -44dBc at 20dBm output power per tune. The DC bias conditions for this part are 6V and 1.4A on the drain and -0.9V on the gate.

• MMA-283136-R5 (Ka-band MMIC power amplifier) operates between 28 and 33GHz. It provides 35dBm (over 3W) of output power at a 1dB gain compression point and 36dBm (4W) of output power at a 3dB gain compression point.

"Leveraging our deep knowledge and long history of supplying pHEMT based microwave/RF devices and amplifiers for wide range applications, we have successfully developed the Ku-band and Ka-band high power amplifiers as new additions to our MMIC products family," said Dr Greg Zhou, general manager of MwT. "The applications of these two MMIC products include VSAT, point-to-point microwave links for high-data-rate communications, military and space, and other applications. The exceptional power level from the MMA-283136-R5 exceeds the output power specification demanded by today's emerging Ka-band (30GHz) VSAT high data rate applications." 

Both MMIC power amplifiers are fully matched for input and output terminals for easy cascade and are packaged in the R5 (5mm x 5mm) surface-mount package. Evaluation boards for power amplifiers in R5 packages are available now.