Hittite launches 4.5mm2 MMIC LNA covering 0.3-3GHz
Hittite Microwave Corp of Chelmsford,MA,USA(which designs and supplies analog,digital and mixed-signal RF,microwave and millimeter-wave ICs,modules and subsystems as well as instrumentation)has launched a broadband gallium arsenide pseudomorphic high-electron-mobility transistor(GaAs pHEMT)monolithic microwave integrated circuit(MMIC)low-noise amplifier(LNA).
The HMC374SC70E is housed in a compact 2.15mm x 2.1mm(4.5mm2)surface-mount package and suits automotive,fixed wireless,CATV,microwave radio,cellular infrastructure and repeater applications operating at 0.3-3.0GHz.
The device is a high-dynamic-range pHEMT MMIC LNA that delivers 1.6dB noise figure,+34dBm output IP3 and 14dB small-signal gain at 900MHz.With saturated output power up to+19dBm and output IP3 to+36dBm,it is suitable for driving the LO port of high-linearity mixers and for transmitter pre-driver applications.This broadband MMIC LNA requires no external matching,is unconditionally stable,and operates from a single supply ranging from+3V to+3.6V.Compared with a discrete implementation,the HMC374SC70E enables higher reliability,better consistency,less PCB area,and reduced component count,claims Hittite.
The HMC374SC70E consumes just 75mA from a+3.3V supply and is housed in an RoHS-compliant plastic surface-mount package.It is also available in a SOT-26 package as the HMC374E.
