Hittite Microwave Corp of Chelmsford,MA,USA(which designs and supplies analog,digital and mixed-signal RF,microwave and millimeter-wave ICs,modules and subsystems as well as instrumentation)has launched two new,2 Watt gallium arsenide pseudomorphic high-electron-mobility transistor(GaAs pHEMT)monolithic microwave integrated circuit(MMIC)power amplifiers.Covering the 9-14GHz frequency range,the new devices suit microwave radio,military and space,SatCom and test&measurement applications,says the firm.
The HMC952 and HMC952LP5GE are four-stage GaAs pHEMT MMIC 2W medium-power amplifiers with temperature-compensated on-chip power detectors operating between 9GHz and 14GHz.The amplifiers provide 33dB of gain,+35dBm of saturated output power,and 27%of power-added efficiency(PAE)from a+6V supply.With up to+43dBm output IP3,the HMC952LP5GE suits high-linearity applications in military and space applications as well as high-capacity point-to-point and point-to-multi-point radios.
The amplifiers also feature I/Os that are internally matched to 50 Ohms and require no external matching components,making them suitable for use as drivers or as the final power stage in a microwave transmitter chain.
Hittite says that the HMC952 die can be easily incorporated into multi-chip modules(MCMs),while the HMC952LP5GE leadless QFN 5mm x 5mm surface-mount packaged version is compatible with high-volume assembly equipment.
Both amplifer versions are a much smaller alternative to bolt-down power amplifier solutions,says the firm,and complement Hittite's range of active and passive components for microwave and millimeter-wave radio applications.