Demand for sapphire for use in handsets is estimated to grow 25-30%, according to US-based crystal growth equipment and solution provider GT Advanced Technologies (GTAT).
GTAT has been promoting HVPE (hydride vapor phase epitaxy) GaN system, GaN epitaxial wafer production equipment alternative to MOCVD. HVPE GaN system has throughput double that for MOCVD and therefore has lower production cost for GaN epitaxial wafers, GTAT said.
Source:
http://www.digitimes.com/news/a20131023PD200.html
