At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has launched two gallium arsenide power amplifiers(PAs)that use its power pHEMT production process to provide high linearity and efficiency as well as30dBm(1W)of output power at 1dB gain compression(P1dB).Target applications are point-to-point(PtP)and point-to-multipoint microwave radio as well as millimeter-wave systems including very small aperture terminal(VSAT)communications.
The TGA2527-SM is a Ku-band PA available in a surface-mount 24-lead 5mm x 5mm x 0.85mm QFN package.Operating at 12.5-15.5GHz,it delivers small-signal gain of 25dB with 31dBm of saturated output power(Psat).Efficiency is claimed to be 20%better than other products.
The TGA4539-SM is a Ka-band PA available in a surface-mount 20-lead 5mm x 5mm x 1.3mm QFN package.Operating at 28-30GHz,it typically provides small-signal gain of 20dB with 30.5dBm of saturated output power(Psat).
Samples and evaluation boards for both devices are available upon request.
