Aixtron Se announced that its Training and Demonstration Center in Suzhou, China, has reached its next planning stage. In March 2013 Qingshan Li overtook the responsibility as Director of Process Support at AIXTRON China Ltd. from Dr. Nicolas Muesgens, who has built up and led the center since its opening one year ago.
“I am proud of what we have achieved,” Dr. Nicolas Muesgens comments. “Customers benefit immensely from seeing and evaluating real process runs inSuzhou without having to interrupt their own production line. This enables customers to increase their efficiency by avoiding lost productivity.”
The new director in Suzhou: Qingshan Li
Tim Wang, General Manager AIXTRON China Ltd.: “We thank Nicolas for having done such a great job in launching the center. In the future, our lab will be even more tailored to our customers’ needs. Most of AIXTRON’s key customers attended a training session during this first year of operation. Their feedback confirm that it is very helpful and effective to have real process demos with training capabilities locally, close to our customers.”
The newly appointed Director Qingshan Li received his Ph.D. in material science from the East China University of Science and Technology (ECUST) in Shanghai. Before joining AIXTRON he held several positions in the field of process engineering at Novellus Systems Inc., most recently as Director Process & Technology.
“My goal is to continue accelerating the drive to increased tool stability and productivity under mass production at our customers´ sites in China with high-quality training in Suzhou,” Qingshan Li comments. “Several customer process demos with major Chinese customers on the CRIUSII-XL are scheduled. For training purposes, a new CRIUS II-XL system trolley reactor will be added and made available to bring the technology even closer to our customers, significantly intensifying our hands-on hardware training. Both of our latest MOCVD systems will have been equipped with advanced features in the 1st half of 2013, e.g. the AIX G5 system with GaN-on-Si capability.”
