Toshiba has announced plans to mass produce LEDs using gallium nitride-on-silicon (GaN-on-Si) technology in October 2012. The technology is a joint product of Toshiba and Bridgelux. The market believes the 8-inch GaN-on-Si substrates for LEDs will begin mass production in 2013.
According to Biing-jye Lee, chairman of Epistar, Toshiba is likely to be the most competitive player in silicon substrate processes. Epistar has been cooperating with Industrial Technology Research Institute (ITRI) to develop the technology for silicon substrates. ITRI plans to incept 8-inch wafer equipment in second-half 2012 for R&D. The research institute has completed the initial development of crystal growing techniques for 8-inch silicon substrates and the technology can be transferred in second-half 2013, said Lee.
Nevertheless, Epistar does not have a schedule for the development of silicon substrates due to lack of cost competitiveness.
Bridgelux believes the mass production of silicon substrates may push price of LED light bulbs to US$5/unit in 2013.
The awareness of saving energy has been rising in Japan, the market that has the highest penetration rate of LED light bulbs. Toshiba estimates that in 2011, the total number of LED light bulbs in Japan exceeded 31 million units. The figure is likely to grow to 51 million units in 2012 and 53 million units in 2013.
Toshiba has been aggressive in developing businesses in the domestic market and has been eyeing China as the next important international market. The falling demand for traditional lighting has caused Toshiba Lighting & Technology to announce the plan of shutting down four lighting plants in Japan. In the future, the three remaining plants in Japan will focus on customized products and commercial lightings will be produced in China to lower costs, according to Toshiba.
