New advancements in LED technology have allowed for it once more to step up its game. The Smart Lighting Engineering Research Center of Rensselaer Polytechnic Institute?recently announced that they have successfully created "the first monolithic integration of an LED and high-electron-mobility transistor on a Gallium Nitride Chip". There is a lot to be said about this mini-merger of LEDs and power transistors onto the same gallium nitride (GaN) chip.
Source Rensselaer News
Per the researchers, this new LED innovation will open up many other doors, expanding into a whole new generation of LED technology. This will also help to create a less expensive and more efficient manufacturing process. Currently, LED lighting systems use LED chips that are made from gallium nitride. Other external components that are used in conjunction with this chip are inductors, silicon interconnects, capacitors, and wires.
Source Rensselaer News
This new technology will allow for these "other" external components to be installed or integrated into one large LED wafer. "This new study, and the device we have created, is just the tip of the iceberg," said Smart Lighting ERC Director Robert Karlicek, a co-author of the study and ECSE professor at Rensselaer. "LEICs will result in even higher energy efficiency of LED lighting systems. But what will be even more exciting are the new devices, new applications, and new breakthroughs enabled by LEICs—they will truly usher in the era of smart lighting."?For more information visit: Rensselaer Edu
