Swiss researchers have built a flash memory cell using the single-atom-thick materials graphene and molydenum disulfide (MoS2).
The cell shows the capability to retain data for ten years and to store one bit per cell.
The device has two layers of graphene on silicon with an MoS2 layer on top.
Source:
http://www.electronicsweekly.com/Articles/2013/03/20/55800/graphene-mos2-flash-memory.htm
