Cree Inc of Durham,NC,USA has introduced low basal plane dislocation(LBPD)100-mm 4H silicon carbide(SiC)epitaxial wafers.This LBPD material exhibits a total BPD density of 1 cm-2 in the epitaxial drift layer,with BPDs capable of causing Vf drift as low as 0.1 cm-2,says Cree.
"Bipolar devices in SiC have long been held back by forward voltage degradation caused by the presence of BPDs,"said John Palmour,CTO,Cree Power&RF."This Low BPD material enables very high voltage bipolar devices such as IGBTs(insulated-gate bipolar transistors)and GTOs(gate turn-off thyristor)to have improved stability over time.This recent development helps remove roadblocks to commercialization of these extremely high power devices."
Source:
http://www.semiconductor-today.com/news_items/2012/SEP/CREE_040912.html
