Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers and III-V epiwafers, has announced the sale of the gallium arsenide (GaAs) epitaxy business of its Soitec Specialty Electronics ...
Tags: sale of GaAs, IntelliEPI, Electronics
An interdisciplinary team at the US Naval Research Laboratory (NRL) has received the Japan Society of Applied Physics’ 2014 Outstanding Paper Award. The award is only given to a select group of papers that present excellent ...
Tags: NRL, Award, Electronics
In Kolkata and Delhi, Oxford Instruments is hosting its third series of annual seminars for the nanotechnology industry in India. ‘Bringing the Nanoworld Together 2014’ will showcase nanotechnology tools and their use in ...
Tags: Oxford Instruments, Seminars, Electronics
At the 18th International Conference on Molecular Beam Epitaxy (MBE 2014) in Flagstaff, AZ, USA , Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, ...
Tags: Riber, MBE, Electrical
For August, Taiwan's WIN Semiconductors Corp (the world's largest pure-play gallium arsenide foundry) has reported revenue of NT$1.04bn (US$34.5m) - its highest revenue in the past 12 months - up 7.41% on July and up 23.45% on a year ago. ...
Deposition equipment maker Aixtron SE of Aachen, Germany has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany, to develop 150mm silicon carbide (SiC) epitaxy ...
Tags: Aixtron CVD SiC, Electrical, Electronics
Researchers in USA and Saudi Arabia have been exploring the potential of using 'van der Waals epitaxy' (vdWE) to grow gallium arsenide (GaAs) on silicon [Yazeed Alaskar et al, Adv. Funct. Mater., published online 26 August 2014]. The team ...
Epiluvac AB of Lund, Sweden says that it is now offering silicon carbide (SiC) chemical vapor deposition (CVD) epitaxy reactors in various configurations. As one of the most interesting semiconductor materials in electrical power ...
Meijo and Nagoya universities in Japan have developed a laser lift-off (LLO) technique for removing gallium nitride (GaN) substrates from ultraviolet (UV) light-emitting diodes (LEDs) to improve light extraction efficiency [Daisuke Iida et ...
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
As clients are adjusting inventories of LED chips used in backlighting and lighting, demand for LED chips in the third quarter of 2014 will significantly decrease sequentially, according to chairman Lee Biing-jye of Taiwan-based LED ...
Tags: LED Demand, LED Chips
Lextar Electronics Corp of Hsinchu Science Park, Taiwan (a vertically integrated manufacturer of high-brightness LED epitaxy, chips and packages, as well as smart lighting products) and LED chip, lamp and lighting fixture maker Cree Inc of ...
Tags: Cree, Taiwanese LED Maker Lextar, Electrical
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has signed a distribution agreement with AnnealSys SAS of Montpellier, France, which specializes in ...
Tags: Riber, MBE systems
Researchers from Ohio State University (OSU) and University of California–Irvine (UCI) have developed a band engineering technique to improve the results from photo-electro-chemical (PEC) etch of nitride semiconductors [Prashanth ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has formed a strategic partnership with Agnitron Technology Inc of Eden Prairie, MN, a focused compound semiconductor R&D company specializing in ...
Tags: MOCVD, process equipment, Electronics