Tokyo-based equipment maker Disco Corp has developed the KABRA (Key Amorphous-Black Repetitive Absorption) laser ingot slicing method. Implementing the process is said to enable high-speed production of silicon carbide (SiC) wafers, ...
Tags: SiC, Disco Corp, laser ingot slicing method
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched two RF switches suitable for the Internet of Things (IoT) applications including the connected home. In addition to the ...
John Bowers, a professor of electrical and computer engineering and of materials at University of California Santa Barbara (UCSB), has been selected to receive the 2017 Institute of Electrical and Electronics Engineers (IEEE) Photonics ...
Tags: Integrated Photonics, PICs
According to a blog by founder Pradeep Sindhu, optical network product provider Juniper Networks Inc of Sunnyvale, CA, USA has entered into an agreement to acquire the fabless, privately held firm Aurrion of Santa Barbara, CA, USA. ...
Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...
Tags: Green LEDs, MOCVD
Nanostructure-based CIGS (copper indium gallium sulphur diselenide) thin-film solar module maker Stion Corp of San Jose, CA, USA says that its solar panels are being used in a new solar electric array that is powering the Avon Central ...
Tags: solar panels, Stion Partners
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has announced its Phase Eight ...
Tags: GaN Device, integrated circuits
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V ...
South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...
Tags: SiC Power, SiC device
Spending on RF high-power semiconductors for the wireless infrastructure markets has flattened out this year, despite the fact that the overall market hit well over $1.5bn in 2015, according to ABI Research's report 'RF Power ...
Tags: High-Power Semiconductor, GaN
II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, has purchased a SICA88 SiC inspection & analysis tool made by the Lasertec Corp of Tokyo, Japan, for ...
Tags: SiC Substrate
Raytheon UK's Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high-temperature, small-form-factor bridge leg power module. Aimed at high-speed switching applications, the module has potential uses in ...
Tags: Raytheon, Electrical Switching
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched what it claims is the fastest gallium nitride (GaN) ...
Tags: Peregrine, GaN FET Driver