Japan’s Fujitsu Semiconductor says it has achieved high output power of 2.5kW in server power -supply units equipped with gallium nitride (GaN) power devices built on a silicon substrate. The firm will exhibit the device for the ...
Tags: Fujitsu, GaN HEMT, Semiconductor, power devices, GaN technology
GaN-on-Si is a new technology that has the potential to replace sapphire substrates in the LED supply chain. Erwin Ysewijn, vice president of sales and marketing at Azzurro Semiconductors, a Germany-based GaN-on-Si supplier, recently ...
Tags: led
Azzurro and Epistar say they have achieved GaN-on-Si based LEDs utilizing Epistar's high-brightness LED structures and Azzurro's patented technology for 150mm GaN-on-Si. The joint project, completed in four months, transferred Epistar's ...
Deposition equipment maker Aixtron SE of Herzogenrath, Germany has seen its third-quarter 2012 equipment orders pick up by 15% sequentially to €34.5m. The company says that current Q4/2012 quotation levels suggest a continuation of ...
Epistar, Taiwan's largest manufacturer of packaged LEDs has decided to trial silicon-based wafers. The company is hoping to take advantage of cost savings in the backend of the LED manufacturing process to in turn broaden SSL deployment. ...
Gallium nitride on silicon (GaN-on-Si)-based LEDs have been fabricated using high‐brightness LED structures of Epistar Corp of Taipei, Taiwan and the patented technology for 150mm GaN-on-Si substrates of Azzurro Semiconductors AG of ...
Tags: GaN-on-Si
ON Semiconductor (Nasdaq: ONNN), a premier global supplier of high performance silicon solutions for energy efficient electronics, has joined the multi-partner, industrial research and development program at imec, a leading nanoelectronics ...
Tags: GaN-on-Si
UK-based Plessey Semiconductors Ltd has been shortlisted in the Electronics Product Category of the British Engineering Excellence Awards 2012,for its new MAGIC(MAnufactured on Gan ICs)High Brightness LED(HB-LED)products.The winners will be ...
Tags: China, British Engineering Excellence Award, HB-LED products
About LEDforum 2012 Taipei Event:LEDforum 2012 Taipei LEDforum 2012 Taipei is a two-day event organized by LEDinside and will be held on November 1st and 2nd at National Taiwan University Hospital International Conference Center.The ...
Tags: LEDforum, Taipei, semiconductor's CTO, npola
Utilizing the company's 150 mm templates the advantages of GaN-on-Si can be gained after very short design-in times. The White Paper outlines technical hurdles to be overcome when migrating to GaN-on-Si, covers key achievements possible ...
Tags: LED
AZZURRO Semiconductors AG of Dresden,Germany,which makes gallium nitride(GaN)epitaxial wafers based on large-area silicon substrates,has released a white paper that describes the easy migration of LED manufacturing to GaN-on-Si.Using its ...
Tags: AZZURRO, GaN-on-Si LEDs, Dresden, DTF, Taipei
The research project Low Energy Electronics Systems (LEES) has started its work with a kick-off meeting. The program’s initiator is the renowned Singapore MIT Alliance for Research and Technology (SMART) Center based in Singapore. The ...
Tags: Lights, Lighting, Smart, LED Professional
Veeco Instruments,a provider of equipment solutions for production of wireless chips,MEMS,hard drives,power electronics and LEDs,has reported the delivery of its TurboDisc K465i MOCVD system to Nantong Tongfang Semiconductor's new LED ...
China's Nantong Tongfang Semiconductor Co Ltd has received shipment of a TurboDisc K465i MOCVD system from epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA. The system will be used to research ...
Tags: MOCVD
Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance