LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN
Following six years of R&D, Raytheon has opened a silicon carbide fab in Glenrothes Scotland which will offer foundry services as well as its own line of high-temperature ICs. Its SiC process has been developed on-site, with Government ...
Tags: Raytheon, silicon carbide fab, IC
DOE announces fiscal 2013 SBIR/STTR funding opportunity The US Department of Energy (DOE) Office of Science has released its DE-FOA-0000760 funding opportunity announcment for the Small Business Innovation Research (SBIR) and Small ...
Tags: RF devices, Wide bandgap semiconductors, DOE, SBIR
Gertrude Neumark Rothschild,whose research helped improve light-emitting and laser diodes now used in many cellphones,flat-screen televisions and Blu-ray disc players,and who waged a successful patent-infringement battle against some of the ...
Tags: Lights, LED, Lighting, Heart Failure