Funded by Science Foundation Ireland (SFI), Invest Northern Ireland (InvestNI) and the US National Science Foundation (NSF) government agencies through the US-Ireland R&D Partnership program, over €1m has been awarded for the project ...
Professor Martin Kuball of the University of Bristol's School of Physics in the UK is one of 19 people to receive the UK Royal Society's Wolfson Research Merit Award Jointly funded by the Wolfson Foundation and the UK's Department for ...
Tags: Wolfson, devices, Electronics
SMA, ABB, and Omron lead global photovoltaic (PV) inverter market-share rankings; however, over the first three quarters of 2014, China-based telecommunications company Huawei made the largest gain in global market share, with just over ...
Tags: PV Inverter, Huawei, Lights
An uninterruptible power system (UPS) is a power electronic apparatus that has energy storage equipment, consists mainly of inverter, rectifier and battery pack, and provides safe, stable and uninterrupted electric energy to load equipment. ...
Tags: uninterruptible power system, UPS
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has introduced the Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system, which incorporates single-wafer ...
For second-quarter 2014, deposition equipment maker Aixtron SE of Aachen, Germany has reported revenue of €46.2m, rebounding by 5% from €43.9m last quarter (which had been down 14% on the previous quarter) and up 2% on €45.3m ...
Tags: Aixtron, MOCVD, Electronics
Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are best positioned to address emerging power electronics performance needs in electric vehicles (EVs), with SiC displacing silicon as early ...
Tags: Power electronics GaN SiC, Electric Vehicle, Electrical, Electronics
Under the leadership of the European Defence Agency (EDA), the multi-national R&D project MANGA (Manufacturable GaN-SiC-substrates and GaN epitaxial wafers supply chain) says that it has succeeded in implementing a supply chain for the ...
Tags: GaN Technologies, HEMT structures, electronics components
Vishay Intertechnology, Inc. NYSE: VSH today announced its technology lineup for PCIM Power Conversion Intelligent Motion Europe 2014, taking place May 20-22 in Nuremberg, Germany. In booth 9-212 at the Exhibition Centre Nuremberg, the ...
Tags: Vishay, semiconductor
Researchers at the University of Arkansas have designed integrated circuits that can survive at temperatures greater than 350°C (about 660°F). Funded by the US National Science Foundation (NSF), their work could improve the ...
Tags: SiC Power electronics HEV, Electrical, Electronics, circuits
Due to new components, power electronic converters for power engineering applications are becoming even more efficient. In particular, silicon carbide (SiC) devices enable the construction of extremely efficient and compact power electronic ...
Tags: SiC Devices, DC-DC Converter
Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?… Yole Développement (Yole) ...
Tags: GaN-on-Si, Power Electronics
Cree Inc of Durham, NC, USA has added two new discrete 650V silicon carbide (SiC) rectifiers to its Z-Rec Schottky diode portfolio. Fabricated using Cree’s SiC technology, the C5D50065D and CVFD20065A are claimed to deliver ultrafast ...
Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its gallium nitride (GaN)-on-diamond wafers have been proven by Raytheon Company to significantly outperform ...
Tags: GaN-on-Diamond Wafers, GaN-on-SiC
Dow Corning Corp of Midland, MI, USA, which provides silicon and wide-bandgap semiconductor technology, has introduced a product grading structure for silicon carbide (SiC) crystal quality that specifies new tolerances on killer device ...