Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power pulsed RF transistors, has developed two gallium nitride on silicon carbide (GaN-on-SiC) devices - the IGN1011M675 and the IGN1011M1200 - targeted at the L-band ...
Tags: GaN-on-SiC Devices, Integra
The XLamp XH LED family is cost optimized for applications such as linear SSL and offers longer life at elevated temperatures relative to plastic packages. Cree has introduced the XLamp XH-G and XH-B mid-power LEDs that are packaged on a ...
An Australian-UK consortium is offering a epitaxial silicon carbide buffer layer for 300mm silicon wafers, claiming it will improve gallium nitride growth for GaN-on-Si LED fabrication. The buffer is the result of over 10 years research ...
The Queensland Micro and Nanotechnology Facility (QMF) of Griffith University in Brisbane, Australia and its industry partner, plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK, have ...
Tags: Silicon, Micro and Nanotechnology
Synthetic diamond materials firm Luxembourg-registered Element Six (part of the De Beers Family of Companies, and co-owned by Belgian materials group Umicore) has acquired the assets and intellectual property of Group4 Labs Inc of Menlo ...
Tags: diamond materials, Electronics
Starting in late 2011, the power electronics downturn in 2012 was quite severe, exhibiting a 20% drop. The market suffered from the global economic downturn, combined with external factors such as China controlling what happened in some ...
Yole Développement organises a Seminar in Korea, concurrently held with International LED Expo 2013. Dedicated to Sapphire and LED areas, the seminar is made up of Yole Développement and industrial players presentations on the ...
The second-generation XP-E2 LEDs include royal blue, blue, green, amber, red-orange, and red options and are drop-in, higher-output replacements for earlier models. Cree has announced the XLamp XP-E2 family of color LEDs after having ...
Tags: Color LEDs, CREE
XP-E2 Cree, Inc. of Durham, North Carolina USA, has announced commercial availability of XLamp® XP-E2 color LEDs. According to Cree, the new XP-E2 color LEDs deliver up to 88 percent higher maximum light output compared to alternative ...
Tags: LED, Cree XP-E2
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes – to be displayed in ...
Tags: TriQuint, Electrical, Electronics
LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has launched 230V GU10 and 100V E11 versions of its new full-spectrum VIVID 2 ...
Tags: Soraa, LED MR16 Lamps
Cree Inc of Durham, NC, USA is introducing what it says is the first commercially available silicon carbide (SiC) six-pack power module in an industry standard 45mm package. Picture: Cree’s SiC six-pack power module. When ...
Tags: Cree SiC, Power Module
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has launched gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) epitaxial wafers on 150mm-diameter semi-insulating silicon carbide (SiC) substrates ...
Tokyo-based Mitsubishi Electric Corp says that it has begun shipping three new types of silicon carbide (SiC) power module for home appliances, industrial equipment and railcar traction systems. The modules, which use Schottky barrier ...
Tags: Mitsubishi Electric, Electric