The discovery of what is essentially a 3D version of graphene – the 2D sheets of carbon through which electrons race at many times the speed at which they move through silicon - promises exciting new things to come for the high-tech ...
Tags: Consumer Electronics, Electronics
The ultra-thin electronic membrane sticks to various surfaces. Credit: Peter Rueegg, ETH Zurich Researchers at ETH are developing electronic components that are thinner and more flexible than before. They can even be wrapped around a ...
Tags: ETH, electronic components, ultra-thin, transparent sensors
For years now, Zhenan Bao, a chemical engineering and materials science professor at Stanford University, has been coming up with new techniques to speed up the charge carrier mobility of organic transistors, which have labored under ...
Tags: Consumer Electronics, Electronics
POET Technologies Inc of Toronto, Canada – which, through subsidiary OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT, USA, has developed the proprietary planar-optoelectronic technology (POET) platform for monolithic ...
Tags: ODIS, POET Technologies, POET
Two university research teams have worked together to produce the world's fastest thin-film organic transistors, proving that this experimental technology has the potential to achieve the performance needed for high-resolution television ...
Tags: thin-film organic transistors, high-resolution television screens
China extracts over 97% of all rare earths. These minerals are at the core of U.S. defense, industrial, and consumer goods technologies. They are used in everything from mobile commucations and sensing devices to wind turbines. China has ...
Tags: Electronic News, Electrical News, Rare Earth
Manufacturers of increasingly minute computer chips, transistors and other products will have to take special note of research findings at the University of Huddersfield. The implications are that a key process used to transform the ...
Tags: nanoscale materials
Nitronex LLC of Morrisville, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband, and industrial markets, has launched the NPA1006, a 28V, 20MHz-1GHz, ...
Tags: Electrical, Electronics
Tokyo-based Mitsubishi Electric Corp has launched a railcar traction inverter system for 1500VDC catenaries that incorporates what is claimed to be the first all-silicon carbide (SiC) power modules made with SiC transistors and SiC diodes. ...
Tags: Mitsubishi Electric SiC power modules SiC, Electrical, Electronics
Engineers at Imec and IBM have independently developed new manufacturing processes for making the next decade's leading chips, they revealed late last year. These efforts will allow the marriage of silicon wafers and certain exotic ...
Tags: Electrical, Electronics
Bendable materials are changing how we think of and use substrates. R&D announcements are made nearly daily on new scientific research that will help enable flexible electronics (electronic products that are bendable or those that can be ...
Tags: Bendable materials, Flexible Electronics, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that its enhancement-mode gallium nitride-on-silicon transistor (eGaN FET) SPICE models have been included in the latest version of National Instruments' Multisim circuit ...
Tags: Electrical, Electronics, Circuit
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: Low-Power Tunneling Transistor, Electrical, Electronics
University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...
Tags: Electrical, Electronics, Mosfets
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington D.C., USA (9-11 December), nanoelectronics research institute imec of Leuven, Belgium reported the first functional strained germanium (Ge) quantum-well channel ...
Tags: FinFETs III-V CMOS, Electrical, Electronics