Cree's launches XLamp XP-G2 LEDs,boosting efficiency by 20%in XP footprint LED chip,lamp and lighting fixture maker Cree Inc of Durham,NC,USA has launched the XLamp XP-G2 LED to deliver luminaire manufacturers up to 20%more lumens per ...
Tags: Cree, XLamp XP-G2 LEDs, efficiency.USA, LED lighting
Cree has prevailed in its LED patent dispute with SemiLEDs,with the latter company agreeing to an injunction preventing sale of the offending LED products from October,as well as paying damages. Two rival LED ...
China's largest municipal street lighting project shines with 1.9m Cree LEDs LED chip,lamp and lighting fixture maker Cree Inc of Durham,NC,USA says that the Beibei district of Chongqing,China has installed more than 20,000 street lights ...
Tags: Cree Inc., Street lighting, China, LED lighting
Cree, Inc. (Nasdaq: CREE) and SemiLEDs (Nasdaq: LEDS) have agreed to end the parties’ patent infringement litigation. As part of the settlement, SemiLEDs agreed to the entry of an injunction effective October 1, 2012 that prohibits ...
Cree Inc of Durham,NC,USA has released a new suite of Verilog-A proprietary nonlinear device models for its gallium nitride(GaN)RF devices(available free to Cree's RF customers),developed for use with leading RF design platforms from ...
Tags: Cree, GaN, RF devices, Verilog-A RF device models, IMS
Cree Inc of Durham,NC,USA has launched a 40V,0.25µm,GaN-on-SiC HEMT process die product family,with power and bandwidth capabilities through the Ku-band that enables the replacement of travel-wave tubes with solid-state ...
Tags: Cree, GaN-on-SiC, HEMT, Amplifier
Cree Inc of Durham,NC,USA has announced the qualification and production release of two new gallium nitride(GaN)processes:G40V4(a 0.25µm process with operating drain voltage up to 40V)and G50V3(a 0.4µm process with operating ...
Cree Inc of Durham,NC,USA has released an updated process design kit(PDK)based on Agilent Technologies'Advanced Design System(ADS)software that will provide microwave and RF design engineers with a comprehensive suite of design and ...
Tags: Cree, GaN-on-SiC, HEMT, PDK, Software
Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
Recently, according to The U.S. Department of Energy (DOE), it has released more than $7 million for three innovative lighting projects at companies in California, Michigan and North Carolina that aim to lower the cost of manufacturing ...
Tags: Market View, led, oled
The U.S. Department of Energy (DOE) has announced three solid state lighting projects to receive a total of $7.1 million in funding in response to the SSL Manufacturing R&D funding opportunity announcement (FOA) DE-FOA-0000561. The two-year ...
The U.S. Department of Energy (DOE) has announced three solid state lighting projects to receive a total of $7.1 million in funding in response to the SSL Manufacturing R&D funding opportunity announcement (FOA) DE-FOA-0000561. The two-year ...
Tags: Market View, LED, OLED
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE
Industry Leaders Integrate LED Products and Controls for Maximum Energy Efficiency DURHAM, N.C. -- The growing demand for energy-efficient LED lighting solutions combined with increasingly stringent energy and building codes require an ...
Tags: LED, Energy, chip, LED fixtures, Cree LED lighting, LED lighting
Cree, Inc. announced that John Kurtzweil has resigned as executive vice president-finance and chief financial officer, effective May 21, 2012, to pursue other opportunities, and that Michael McDevitt has been appointed CFO on an interim ...
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