ARPA-E Deputy Director Cheryl Martin today announced $27 million in funding from the Energy Department’s Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices ...
ARPA-E deputy director Cheryl Martin has announced $27m in funding from the US Department of Energy's (DOE) Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices that ...
Tags: Electrical, Electronics
Hong Kong University of Science and Technology (HKUST) has developed a 600V gallium nitride on silicon (GaN/Si) normally-off metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with large gate swing and low current ...
Tags: GaN MIS-HEMTs AlGaN, Electrical, Electronics
Singapore’s Nanyang Technological University (NTU) has developed a passivation process for aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on silicon substrates that significantly ...
Tags: Nitride HEMTs, Electrical
Global electronic components distributor Digi-Key Corp of Thief River Falls, MN, USA has announced new inventory of gallium nitride (GaN) power management products, available for immediate shipment as part of an exclusive global ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Vibratory bowl feeders are the most reliable and cost-effective solution available on the market for feeding molded plastic parts, electrical components, glass vials, stamped formed or machined parts. It is one of the excessively employed ...
TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced the release of new gallium nitride (GaN) transistors that offer what is claimed to be superior gain, thermal management and efficiency for commercial and defense RF amplifier ...
Tags: TriQuint, Optical Modulator
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK’s University of Nottingham has purchased two GENxplor R&D molecular beam epitaxy (MBE) systems for its School of Physics and ...
Tags: Optoelectronic, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC9017 half-bridge development board for high-current, high-stepdown-voltage, buck intermediate bus converter (IBC) applications using enhancement-mode gallium ...
Veeco Instruments announced that the University of Nottingham, United Kingdom, purchased two GENxplor™ R&D Molecular Beam Epitaxy (MBE) Systems for its School of Physics and Astronomy. The systems will enable the growth of high ...
Tags: MBE Systems, Lighting
Taiwan’s National Chiao-Tung University has developed a titanium nitride/copper (TiN/Cu) gate structure for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) that shows improvements over a comparison ...
Tags: GaN HEMT, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA, which makes semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications, has announced the newest entry in its portfolio of GaN in Plastic packaged ...
Tags: MA-COM GaN RF power transistors, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has extended its range of high-speed, ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Modern power transistors based on gallium nitride (GaN) enable power electronic switches to operate at much higher switching frequencies compared with those based on silicon (Si). Advantages include increased power density per volume and ...
Tags: Fraunhofer ISE, Electrical, Electronics
ROHM Semiconductor of Santa Clara, CA (the US arm of system LSI, discrete components and module product maker ROHM Co Ltd of Kyoto, Japan) has launched two 80milliOhm 1200V silicon carbide MOSFETs, the SCT2080KE and SCH2080KE, designed to ...
Tags: Electrical, Electronics