At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), ON Semiconductor of Phoenix, AZ, USA (which supplies silicon-based power and signal management, logic, discrete and custom devices for ...
Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced an eGaN FET designed with a ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching transistors based on its proprietary Island Technology for power conversion and control applications, has signed an agreement with ...
The LED industry is now fully embracing the fast-growing lighting market as (based on revenues) LED lighting has become the largest sector among LED applications, surpassing LCD backlighting in 2014, and is expected to be the major driver ...
Tags: LEDs MOCVD, LED Chip
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a gallium nitride (GaN) bias controller and ...
Tags: M/A-COM, semiconductors, Electronics
k-Space Associates Inc of Dexter, MI, USA (which supplies thin-film metrology tools for the semiconductor, compound semiconductor and solar markets) has reported revenue for its patented kSA BandiT wafer and film temperature monitoring ...
Tags: k-Space, Electronic Materials, Electrical
Energized by growing demand for power supplies, hybrid and electric vehicles, photovoltaic (PV) inverters and other established applications, the emerging global market for silicon carbide and gallium nitride power semiconductors will grow ...
Tags: GaN SiC Power electronics, power supplies, Electronics
Funded by Science Foundation Ireland (SFI), Invest Northern Ireland (InvestNI) and the US National Science Foundation (NSF) government agencies through the US-Ireland R&D Partnership program, over €1m has been awarded for the project ...
Due to the major aggressive expansion plans of some Chinese LED companies, 220 gallium nitride (GaN) metal-organic chemical vapour deposition (MOCVD) reactors will be installed in 2015, according to the latest data from the IHS LED ...
Tags: GaN MOCVD LEDs Epistar Sanan OptoElectronics, LED companies, Electronics
Due to the major aggressive expansion plans of some China-based LED companies, IHS forecasts that 220 gallium nitride (GaN) reactors will be installed in 2015. This new capacity expansion is slightly different from what happened several ...
Tags: GaN, MOCVD Companies, Lights
Shunfeng International Clean Energy Limited (SFCE) announced that it has signed an MOU with Lattice Power to acquire a 51% ownership stake in the company. SFCE's successful bid in Lattice Power is a milestone for the listed company as it ...
Tags: SFCE, Lattice Power, Lights
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has added to its full-visible-spectrum LED product portfolio by launching a PAR20 lamp with ...
Tags: PAR20 LED Lamp, Soraa, LED Lamp