Researchers at Korea's Chonbuk National University and Korea Institute of Science and Technology have improved the contact of graphene with p-type gallium nitride (p-GaN), resulting in improved near-ultraviolet (NUV) light-emitting diodes ...
Tags: Near-ultraviolet LEDs, Graphene GaN MOCVD, Gallium Nitride
Researchers in China have developed a selective area epitaxy (SAE) approach to create nanopyramids of nitride semiconductor 'white' light-emitting diodes (LEDs) without using phosphors [Kui Wu et al, Appl. Phys. Lett., vol103, p241107, ...
Tags: Electrical, Electronics, LED
Researchers based in Korea and Egypt have used wafer thinning to increase the efficiency of nitride semiconductor green light-emitting diodes (LEDs) [Wael Z. Tawfik et al, Appl. Phys. Express, vol6, p122103, 2013]. The contributing ...
Review Display Systems Ltd (RDS), specialist provider of optimal technical and commercial display system and embedded computing solutions, announces its appointment as distributor for Lumineq Displays – handling both their transparent ...
Tags: Consumer Electronics, Displays
Japan’s Tottori University has produced blue-green light-emitting diode (LED) structures using zinc sulfide telluride (ZnSTe) material [Kunio Ichino et al, Appl. Phys. Express, vol6, p112102, 2013]. The researchers see their work as ...
Universal Display Corporation, enabling energy-efficient displays and lighting with its UniversalPHOLED(R) technology and materials, today announced that the European Patent Office (EPO) issued a decision on the previously-disclosed appeal ...
Chinese Academy of Sciences' Semiconductor Lighting R&D Center at the Institute of Semiconductors in Beijing has developed an electrically driven color-tunable light-emitting diode (LED) based on indium gallium nitride (InGaN) quantum wells ...
Tags: LED, Electrical, Electronics, Semiconductor
Universal Display Corp. announced that the Japanese IP High Court delivered a decision reversing the Japanese Patent Office’s (JPO) prior invalidation of the broad claims in the Company’s Japanese Patent No. JP-4511024 (the JP ...
Tags: IP High Court, OLED Patent
Researchers in Taiwan have used nanopyramid nitride semiconductor structures to explore long-wavelength green, olivine and amber light-emitting diode (LED) structures [Shih-Pang Chang, Optics Express, Vol. 21, p23030, 2013]. The team was ...
Tags: Nitride LEDs, Electronics
Taiwan’s National Cheng Kung University has developed near-green light-emitting diodes (LEDs) using a new indium gallium nitride (InGaN) growth process that gives devices with a higher peak external quantum efficiency of 48.6% ...
Tags: LEDs, Near-green LEDs, InGaN MOCVD
Taiwan’s National Tsing Hua University has developed a method to improve the performance of zinc oxide (ZnO) transparent conductive oxide (TCO) as an electrode for short-wavelength nitride semiconductor light-emitting diodes (LEDs) ...
Tags: zinc oxide, LEDs
Germany's Azzurro Semiconductors AG has reported uniformity measurements for indium gallium nitride (InGaN) light-emitting diodes on large-diameter silicon substrates up to 200mm [Andrea Pinos, etal, Appl. Phys. Express, vol6, p095502, ...
Tags: InGaN Silicon substrates, LED, Electrical, Electronics
Researchers in France have developed a monolithic metal-organic vapor phase epitaxy (MOVPE) process for growing indium gallium nitride (InGaN) light-emitting diodes (LEDs) with a multiple quantum well (MQW) light converter [Benjamin ...
Tags: Electrical, Electronics
The Chinese Academy of Sciences’ Research and Development Center for Semiconductor Lighting has been exploring the effect of p-type doping of the barriers in multiple quantum well blue-green (~500nm) light-emitting diode (LED) ...
Tags: Blue-Green LEDs, Electronics
Bruker Corp has introduced its LumiMap electroluminescence system for high-brightness light-emitting diode (HB-LED) epi wafer process metrology. Joining a suite of other Bruker HB-LED epi metrology tools, LumiMap incorporates many of the ...
Tags: Hb-LED Epi Wafers, Electrical