Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V ...
When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...
Tags: SiC Power, SiC device
The global light-emitting diode (LED) packaging equipment market will rise at a compound annual growth rate (CAGR) of almost 2% to more than $656m in 2020, according to a report by Technavio. The report considers the emergence of COB ...
Tags: LED, packaging equipment, COB
Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
BluGlass Ltd of Silverwater, Australia – which was spun off from the III-nitride department of Macquarie University in 2005 to develop a low-temperature process using remote plasma chemical vapor deposition (RPCVD) to grow materials ...
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
Power management company Eaton today announced the introduction of the Ephesus All Field light-emitting diode (LED) Series. The LED solution provides high schools, colleges, municipalities and other venues with a high-quality, ...
Tags: Eaton, LED, Lighting business
The global market for light-emitting diode (LED) luminaires for horticultural applications is expected to grow to $2.8bn by 2024, according to the report 'LED Lighting for Horticultural Applications' from Navigant Research. The next five ...
Tags: Lighting market, horticultural market, LED
Building on the new commitments to the Global Lighting Challenge announced in early June during the Clean Energy Ministerial, the US Department of Energy (DOE) is announcing funding for nine research and development projects that will ...
Vishay Intertechnology Inc of Malvern, PA, USA has introduced a new dual-color red and IR emitting diode designed to save space in wearable devices and medical patient monitoring systems. Offered in a compact 2mm x 2mm x 0.87mm package, ...
Tags: Vishay, Wearable devices, Medical patient monitoring systems.
Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has announced the ...
Tags: GaN-on-Si, power transistor