Plextek RFI Ltd of Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, has announced a new reference design for a gallium nitride (GaN) power amplifier (PA) monolithic microwave integrated circuit ...
Tags: MMICs, microwave, millimeter-wave modules
The US Army Research Laboratory (ARL) has entered into a collaborative alliance via a $1.1m grant with Raytheon Company of Waltham, MA, USA to develop Scalable, Agile, Multimode, Front End Technology (SAMFET) for the Army's Next Generation ...
Tags: ARL, next-generation radar systems
Spurred by new technology and architectures, very small aperture terminal (VSAT) applications are evolving from enterprise connectivity and video to competitive wireless broadband alternative, notes the Strategy Analytics Advanced ...
Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has launched a range of X-band gallium nitride (GaN)-based pulsed solid-state power amplifiers (SSPA) offering integrated ...
Tags: GaN-on-diamond, radar application
A new highly efficient power amplifier (PA) based on silicon-on-insulator (SOI) CMOS could help to make possible next-generation cell phones, low-cost collision-avoidance radar for cars and lightweight microsatellites for communications, ...
Tags: Power Amplifier, Cell Phones
Smart electric meter, an important basic device for acquiring smart grid data, undertakes the tasks of electricity data acquisition, metering and transmission, and plays a fundamental role in achieving information integration, analysis & ...
Tags: Smart Electric Meter, smart grid
Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
Keysight Technologies Inc of Santa Rosa, CA, USA (which provides electronic measurement instruments, systems and related software used in the design, development, manufacture, installation, deployment and operation of electronic equipment) ...
Tags: Keysight, oscilloscopes, InP
Future radar imaging systems and 5G communication systems will generate improved resolution and provide higher data-transmission rates when operated at higher frequencies, but at the cost of increased power consumption. To reduce power ...
Researchers in France believe they have made preliminary steps towards establishing a silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) platform for quantum information processing. Quantum information processing ...
Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) for use in base transceiver stations (BTS) operating in the 3.5GHz band of fourth generation (4G) mobile ...
Tags: Mitsubishi Electric, GaN HEMT, Electronics
As part of its strategy to move more significantly into power semiconductors for industrial and automotive markets, Littelfuse Inc of Chicago, IL, USA has made an investment in silicon carbide (SiC) diode and MOSFET supplier Monolith ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices, Electrical
University of Cyprus, Cyprus University of Technology, and University of Crete have been exploring the potential of Frster resonant energy transfer (FRET) from an indium gallium nitride (InGaN) single quantum well (SQW) to a light-emitting ...
Tags: InGaN, InGaN quantum well, FRET
Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that on 3 December at 18:00GMT (10:00PT/13:00ET/19:00CET) its CEO Liam Devlin is presenting ...
Tags: Plextek, GaN Transistors, GaN transistor