Researchers in China have used laser micromachining to boost light extraction efficiencies of nitride semiconductor light-emitting diodes (LEDs) by up to 46% [Bo Sun et al, J. Appl. Phys., vol113, p243104, 2013]. The team was based at ...
Tags: LED, Laser Sculpting, Electrical, Electronics
, Inc., yesterday announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree's extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN ...
Tags: Cree GaN HEMT, Lights, Lighting
It is reported that Nevada Power of Reno and Las Vegas is offering substantial rebates ($12 per lamp, based on 0.30/Watt) on Soraa's gallium-nitride on gallium-nitride (GaN on GaN), full visible spectrum LED MR16 lamps, in order to speed up ...
To accelerate the adoption of high quality, energy efficient LED lighting Con Edison of New York is offering substantial rebates (approximately $22, based on 13.2¢/kWh) on Soraa's GaN on GaN™, full visible spectrum LED MR16 ...
Tags: LED lighting, LED
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, says that, to accelerate the adoption of energy-efficient LED lighting, Con Edison of New ...
Tags: LED, Lamp, Electrical
The Government of Nepal would soon launch programmes for the support of the garment sector, Finance Minister Shanker Prasad Koirala has said. Addressing the 22nd Annual General Meeting of Garment Association-Nepal (GAN), Mr. Koirala ...
Tags: Nepal Govt, Garment Sector
Saelig Company is now distributing samples of Plessey Semiconductors' GaN-on-Silicon MAGIC PLW111010 PLCC-2 SMT white light LEDs. These LEDs are claimed to be the first commercially available solid state illuminators manufactured on 6" ...
Cree Inc of Durham, NC, USA has signed a non-exclusive worldwide patent license agreement with Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) that provides access to ...
Tags: Transphorm Cree, Electrical, Electronics
Researchers in China have been developing nanopatterned-sapphire substrates (NPSS), achieved with nano-sphere lithography (NSL), as a basis for the production of superior aluminium gallium nitride (AlGaN) semiconductor material for deep ...
Tags: DUV LEDs, LED, Electrical, Electronics
Sub-watt LEDs in 3014 and 3030 packages target general illumination and are based on the gallium-nitride-on-silicon technology developed by Toshiba and Bridgelux. Toshiba has announced two mid-power white LED families that are being ...
Tags: LED, Electrical, Electronics, Lighting
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that in third-quarter 2013 China’s largest LED maker Sanan Optoelectronics Co Ltd has placed a multi-tool order for TurboDisc MaxBright ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that in second-quarter 2013 it received an KaiStar Lighting Co Ltd. Order for multiple TurboDisc MaxBright M metal-organic chemical vapor ...
Tags: Kaistar, LED Manufacturing Ramp
Veeco announced on July 29 that Sanan Optoelectronics Co. Ltd., the biggest LED maker in China, has placed a multi-tool order for Veeco's TurboDisc MaxBright M Metal Organic Chemical Vapor Deposition (MOCVD) Systems in the third quarter of ...
Toshiba Corporation announced the launch of white LEDs fabricated with gallium nitride-on-silicon (GaN-on-Si) process. The LEDs are low power sub-watt type and ideal for indoor lighting applications, due to reduction of forward voltage ...
Tags: Toshiba, White LEDs
Peking University has found that using a pre-strain layer in nitride semiconductor epitaxial structures designed for blue laser diodes (LDs) can reduce the efficiency-sapping quantum-confined Stark effect (QCSE) [Cao Wen-Yu et al, Chin. ...