The UK Government’s Chief Secretary to the Treasury, Danny Alexander, has announced a £2m boost for research into the development of gallium nitride (GaN) power semiconductors by Netherlands-based electronics firm NXP ...
Tags: NXP, Power Semiconductors
The Queensland Micro and Nanotechnology Facility (QMF) of Griffith University in Brisbane, Australia and its industry partner, plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK, have ...
Tags: Silicon, Micro and Nanotechnology
Synthetic diamond materials firm Luxembourg-registered Element Six (part of the De Beers Family of Companies, and co-owned by Belgian materials group Umicore) has acquired the assets and intellectual property of Group4 Labs Inc of Menlo ...
Tags: diamond materials, Electronics
LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications) says that, in his invited talk at the LED Technology Forum in Singapore (7-10 ...
Tags: LayTec, Singapore's IMRE
Yole Développement organises a Seminar in Korea, concurrently held with International LED Expo 2013. Dedicated to Sapphire and LED areas, the seminar is made up of Yole Développement and industrial players presentations on the ...
A contentious controversy surrounds the high intensity of indium gallium nitride (InGaN) LEDs, with experts split on whether or not indium-rich clusters within the material provide their remarkable efficiency. Now, researchers from the ...
Tags: InGaN LEDs, Electronics
Kim Kisslinger, seen here with a focused-ion beam instrument, reduced the InGaN samples to a thickness of just 20 nanometers to prepare them for electron microscopy. From the high-resolution glow of flat screen televisions to light bulbs ...
Tags: Atomic-Scale, LED
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, has redesigned its website to include ...
Tags: EPC, Electrical, Electronics
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes – to be displayed in ...
Tags: TriQuint, Electrical, Electronics
Xilinx Inc of San Jose, CA, USA, which provides all-programmable field-programmable gate arrays (FPGAs), systems-on-chip (SoCs) and 3D ICs, and Japan's Sumitomo Electric Industries Ltd are collaborating to reduce capital expenditure (CapEx) ...
Tags: SEI, Electrical, Electronics
LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN
LED chip and lighting array maker Bridgelux Inc of Livermore, CA, USA has closed an agreement with Tokyo-based semiconductor manufacturer Toshiba Corp (announced on 22 April), which aims to strengthen and extend their strategic technology ...
Tags: Bridgelux, GaN-on-Si LEDs
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has launched 230V GU10 and 100V E11 versions of its new full-spectrum VIVID 2 ...
Tags: Soraa, LED MR16 Lamps
Researchers in Korea have used three-dimensional (3D) graphene foam as a transparent conductor for the p-contact of blue nitride semiconductor light-emitting diodes (LEDs) [Byung-Jae Kim et al, Appl. Phys. Lett., vol102, p161902, 2013]. The ...
Tags: Graphene foam, LEDs
Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) says that Fumihide ‘Humi’ Esaka will join the firm as its new CEO, starting 1 July. Transphorm reckons that ...
Tags: Transphorm, Electronics Veteran