Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has entered into a settlement agreement with El Segundo-based Efficient Power Conversion Corp (EPC) - which makes enhancement-mode gallium nitride on ...
Tags: Electrical, Electronics, semiconductor, Power semiconductor
Devices with wide-bandgap semiconductors will offer the greater competitive advantage in micro-inverters and small string inverters, reckons market analyst firm Lux Research. Wide-bandgap semiconductors – specifically, silicon ...
Tags: inverters, Electrical, Electronics
China-based researchers have reported that country's first diamond metal-semiconductor field-effect transistors (MESFETs) with RF characteristics [Feng ZhiHong et al, Science China Technological Sciences, vol56, p957, 2013]. The team was ...
Tags: Diamond MESFET MESFET Diamond, Electrical, Electronics
More than 100 billion gallium nitride light-emitting diodes will ship in 2013, according to the report 'Q2 GaN LED Supply and Demand' from IMS Research (now part of IHS Inc). With mobile phones typically containing five or 10 LEDs and ...
Tags: LED, Electrical, Electronics
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA says that RF-Lambda of San Diego, CA, USA, which makes and distributes RF components for analog wireless networks in North America, ...
Research firm IHS expects that there will be more than 100 billion GaN LED units to be shipped in 2013 and the revenue from GaN LED products will exceed 100 billion U.S. dollars. IHS expects that the total revenue of GaN LED products ...
Soraa has recently released the first GaN on GaN LED in a 50W halogen equivalent MR16 lamp with several new features.This LED has a gallium nitride substrate, triangular shaped chip, simplified epitaxial structure and an original ...
Gallium-nitride-on-silicon architecture inches closer to sapphire-based LED performance levels but a significant gap remains. Plessey Semiconductors has announced the PLB010350 LED that it is manufactured on its gallium-nitride-on-silicon ...
New advancements in LED technology have allowed for it once more to step up its game. The Smart Lighting Engineering Research Center of Rensselaer Polytechnic Institute?recently announced that they have successfully created "the first ...
Tags: LED, Lights, Lighting, Smart Lighting
Plessey Semiconductors Ltd says that samples of 350mW GaN-on-Si LEDs are now available. The entry-level lighting products are manufactured on Plessey’s 6-inch MAGIC (Manufactured on GaN I/C) line at its Plymouth, England facility. The ...
Tags: Silicon LEDs, Plessey
TurboDisc MaxBright® MHP™ GaN MOCVD Multi-Reactor System Veeco MOCVDs are crucial to LED chip production. The quality, efficiency, and yield of epitaxial wafers may affect the cost and output of the LED epitaxial wafer plant. ...
Tags: LED MOCVD, LED Equipments
More than 100 billion gallium nitride light-emitting diodes (GaN LED) will ship in 2013 - the equivalent of 15 for every person on the planet using this particular type of lighting device incorporating the GaN semiconductor material, ...
GaN LEDs set to top 100 billion units 25 Jun 2013 Shipments of the blue-emitting chips will reach new milestone this year, reports analyst company IHS. Analysts at the market forecasting company IMS Research (part of IHS) are expecting ...
According to IHS isuppli's research's report titled "Q2 GaN LED Supply and Demand", more than 100 billion GaN LEDs will ship in 2013. It means that there are 15 GaN LEDs for every person on the earth. In our daily life, there are many ...
It is reported that Hong Kong University of Science and Technology (HKUST) has developed silicon substrate green and yellow nitride semiconductor LEDs. Details of the development were published in the May 29th issue of IEEE Electronic ...
Tags: HKUST, Lighting, Semiconductor, LED