For first-quarter 2013, GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has reported revenue of $26.4m, down 7.2% on $28.4m a year ago and 13.4% on $30.5m last quarter. The firm had ...
Tags: Anadigics, wireless and wireline
LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN
LED chip and lighting array maker Bridgelux Inc of Livermore, CA, USA has closed an agreement with Tokyo-based semiconductor manufacturer Toshiba Corp (announced on 22 April), which aims to strengthen and extend their strategic technology ...
Tags: Bridgelux, GaN-on-Si LEDs
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has launched 230V GU10 and 100V E11 versions of its new full-spectrum VIVID 2 ...
Tags: Soraa, LED MR16 Lamps
Verticle Inc of Dublin, CA, USA has extended its range of Honeycomb hexagonal-shaped vertically structured InGaN-based LED chips from blue wavelengths (in mass production since February 2012) to ultraviolet (UV). As with the firm’s ...
Valence Process Equipment, Inc. (VPE) has announced the commercial release of the VPE GaN-500 MOCVD system, a new metal organic chemical vapor deposition (MOCVD) system for production of high-brightness light emitting diodes (LEDs). The VPE ...
Tags: LED industry, LED
Soraa has garnered much attention since founder Japanese LED scientist Shuji Nakamura has been helping drive the company towards success. Soraa was able to leverage funding from the US Department of Energy (DOE), and now the company has ...
Researchers in Korea have used three-dimensional (3D) graphene foam as a transparent conductor for the p-contact of blue nitride semiconductor light-emitting diodes (LEDs) [Byung-Jae Kim et al, Appl. Phys. Lett., vol102, p161902, 2013]. The ...
Tags: Graphene foam, LEDs
Researchers based in China and Sweden have proposed fast chemical vapor deposition (CVD) of graphene as a route to more cost-effective transparent conducting layers (TCLs) for nitride semiconductor light-emitting diodes (LEDs) [Xu Kun et ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has introduced its series of GaN in Plastic packaged power transistors ...
Tags: MACOM, Plastic Transistors
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has introduced its series of GaN in Plastic packaged power transistors ...
Tags: MACOM, Plastic Transistors
IT services provider NTT DATA Inc has expanded its customer agreement with GaN-on-GaN LED technology firm Soraa Inc. Challenged with providing rapid real-time reporting to executives, as well as better interaction with their back-end ...
Tags: Soraa, SAP Business
Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) says that Fumihide ‘Humi’ Esaka will join the firm as its new CEO, starting 1 July. Transphorm reckons that ...
Tags: Transphorm, Electronics Veteran
For first-quarter 2013, RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reported revenue of $184.2m, down 15% on $216.7m on a year ago and 21% on $233.6m last quarter. ...
Tags: TriQuint, Mobile Device
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has launched gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) epitaxial wafers on 150mm-diameter semi-insulating silicon carbide (SiC) substrates ...