Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has announced a new technical brief detailing its progress in boosting linearity by using passive MMIC mixers based on gallium nitride (GaN) technology. ...
Tags: Custom MMIC, MMIC mixers
GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – says that its transistors are being used by power ...
Tags: GaN Systems, Solar Power Inverter
Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...
Tags: PowerAmerica, GaN products
GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – says that its funding partners have been recognized ...
Tags: GaN Systems Power, semiconductors
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced its Phase Nine Reliability ...
Tags: gallium nitride, FETs
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave broadband communications systems) has received follow-on orders from military customers for its X-Band line of gallium nitride (GaN)-based ...
Tags: Advantech Wireless, RF equipment
As 2016 comes to an end, there were many exciting and surprising technology breakthroughs, based on statistics complied by LEDinside there were at least 10 major technology advancements this year. American researchers make droop free LEDs ...
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched two new power amplifiers (PAs) including what is claimed to be the first ...
Tags: Qorvo, PAs, GaN technology
The US Missile Defense Agency has awarded Raytheon Company of Waltham, MA, USA a contract modification to develop a transition to production process to incorporate gallium nitride (GaN) components into existing and future AN/TPY-2 radars. ...
The UK's University of Cambridge and Japan's National Institute for Materials Science have developed single-photon emission devices using layers of graphene, hexagonal boron nitride (hBN), and transition-metal dichalcogenides (TMDs) [Carmen ...
SENTECH Instruments GmbH of Berlin, Germany says that the Institute for Microelectronics and Microsystems (CNR-IMM) in Catania – which is part of the Physics and Matter Technologies Department (DSFTM) of the National Research Council ...
Tags: SENTECH Instruments GmbH, CNR-IMM
Jing Zhang, an engineering faculty member at Rochester Institute of Technology, has received a $305,000 grant from the US National Science Foundation (NSF) to acquire an inductively coupled plasma reactive-ion etching (ICP-RIE) system for ...
Tags: RIT, NSF, ICP-RIE system
UK-based LED maker Plessey has announced the first standard LED module based on its Stellar beam-forming technology. The new standard module is said to open up opportunities for creativity in industrial and architectural lighting design. ...
Tags: Plessey, first standard LED module, Stellar beam-forming technology
UK-based process equipment maker Oxford Instruments has announced the development and launch of a silicon carbide (SiC) via plasma etch process using its PlasmaPro100 Polaris etch system. SiC is becoming an increasingly important ...
Tags: Oxford Instruments, SiC, GaN RF devices
A master supply agreement has established e2v inc of Milpitas, CA, USA (which provides solutions, sub-systems and components to the medical & science, aerospace & defense and commercial & industrial markets) as the global supplier of 100V ...