LED front‐end equipment market to see turbulent investment cycles Market research firm Yole Développement and EPIC have announced the report 'LED Front‐End Manufacturing' (to be published on 16 July), dedicated to the ...
Taiwan National Tsing Hua University has used a hybrid ohmic-Schottky drain to reduce buffer leakage and improve breakdown performance in aluminium gallium nitride(AlGaN)semiconductor transistors produced on silicon substrates[Yi-Wei Lian ...
Tags: Nitride HEMTs, Silicon, Taiwan, AlGaN, Semiconductor
Massachusetts Institute of Technology (MIT) researchers have found that a post-etch anneal dramatically improves the performance of their self-aligned indium gallium arsenide (InGaAs) quantum-well metal–oxide–semiconductor ...
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material
The manufacturing conference at Strategies in Light focused on methods for reducing cost through the manufacturing supply chain. Yesterday kicked off the manufacturing conference portion of Strategies in Light. Presenters discussed various ...
Tags: Market View, led
Vacuum pumps are used in many industrial and scientific processes including: Composite Plastic moulding processes (VRTM) Driving some of the flight instruments in older and simpler aircraft without electrical systems. The production of most ...
Tags: Industry Knowledge, Learning Center, pump, vacuum pump