Applied Optoelectronics Inc (AOI) of Sugar Land, near Houston, TX, USA, a manufacturer of fiber-optic access network products (including components, modules and equipment) for the internet data-center, cable TV broadband, and ...
Tags: Applied Optoelectronics, lasers
Although wireless backhaul radio quantities will grow slowly to about 1.7 million units in 2019, price erosion will cause the corresponding RF component revenue in the segment to decline at a compound average growth rate (CAGR) of minus 2% ...
Tags: RF component, Electronics
At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), silicon carbide (SiC)-based power product maker Cree Inc of Durham, NC, USA — exhibiting with distributor partner MEV Elektronik Service GmbH ...
Tags: Power Conversion, Cree
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA, a provider of RF solutions for mobile, infrastructure and aerospace/defense applications, has launched a family of hybrid gallium nitride (GaN)/gallium arsenide (GaAs) power amplifiers ...
Tags: Power Amplifier, Qorvo
Broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, US is shipping production volumes of its ACA1216 surface-mount line amplifier to Applied Optoelectronics Inc's China subsidiary Global Technology, ...
Tags: Anadigics, CATV Infrastructure
Broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA is shipping its AWL5911 802.11ac WiFi power amplifier (PA) in volume for use in TRENDnet's new AC3200 TEW-828DRU tri-band wireless router. ...
Samsung favoured its own Exynos chipset for the Galaxy S6 and S6 Edge, snubbing the industry trend of opting for Qualcomm’s processing fare.This might not be the case for the company’s future flagship devices however, as ...
Tags: Mobile Phones, Samsung, Qualcomm Chip
Energized by growing demand for power supplies, hybrid and electric vehicles, photovoltaic (PV) inverters and other established applications, the emerging global market for silicon carbide and gallium nitride power semiconductors will grow ...
Tags: GaN SiC Power electronics, power supplies, Electronics
At the 30th IEEE Applied Power Electronics Conference & Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Infineon Technologies AG of Munich, Germany has announced the expansion of its gallium nitride (GaN)-on-silicon technology ...
Tags: Evatec Sputtering, PVD, Electronics
Taiyo Yuden’s high capacity (over 100μFUnit of capacitance. The basic unit of a measure of a capacitor. A capacitor charged to 1 volt with a charge of 1 coulombA coulomb is the unit of electric charge. It is named after ...
Tags: MLCC Line, high capacity, Electrical
Tokyo-based Mitsubishi Electric Corp has developed a gallium nitride high-electron-mobility transistor (GaN HEMT) offering high output power and efficiency for use in base transceiver stations (BTS) operating in the 3.5GHz band for ...
Tags: Mitsubishi Electric, GaN HEMT
Texas Instruments Inc (TI) has introduced what it claims is the first 80V, 10A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, consisting of a high-frequency driver and two GaN FETs in a half-bridge ...
Tags: GaN FETs, transistor
ROHM of Kyoto, Japan says that its SCT2080KE silicon carbide (SiC) MOSFET has been adopted in the new SiC-Pulser Series of ultra-high-voltage pulse generators launched by Japan's Fukushima SiC Applied Engineering Inc. Picture: ...
Tags: Pulse Generators, Generators
To address the needs of small-cell designers, Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the CDPA35045 asymmetric Doherty power amplifier (PA) reference design ...
Guerrilla RF Inc of Greensboro, NC, USA, which provides monolithic microwave integrated circuits (MMICs) to wireless infrastructure original equipment manufacturers for greater coverage area and higher data rates, has introduced its latest ...
Tags: Small Cells, Antenna Systems, Electrical