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Toshiba Plans to Mass Produce LEDs Using Gallium Nitride-on-Silicon (GaN-on-Si) Technology

Jul 30, 2012

Toshiba has announced plans to mass produce LEDs using gallium nitride-on-silicon (GaN-on-Si) technology in October 2012. The technology is a joint product of Toshiba and Bridgelux. The market believes the 8-inch GaN-on-Si substrates for ...

Tags: GaN-on-Si

Plessey Semiconductors Create a Production Line for Its New HBLED Products

Jul 30, 2012

Plessey Semiconductors has today taken delivery of a CRIUS®II-XL reactor in a 7x6-inch wafer configuration from AIXTRON,as the first part of a multi-million pound investment to create a production line for its new High Brightness ...

Tags: LEDs, Plessey Semiconductors, MaGIC Technology

Large-Scale Adoption of Retrofit LED Lamps Are Forecasted to Lead to $100 Billion

Jun 27, 2012

Large-scale adoption of retrofit LED lamps are forecasted to lead to $100 billion in global energy savings over the next five years, according to a recent report from IMS Research based on numerous interviews with leading industry ...

Tags: LED lamp

Daewon Innost Developed The NPSS Technology for LED Modules

Jun 21, 2012

Using proprietary Nano-Pore Silicon Substrate(NPSS)technology developed by Daewon Innost,Glaxum arrays provide the industry's best thermal dissipation performance with unprecedented thermal impedance of only 0.41 degrees centigrade per ...

Tags: LED, NPSS, chip, efficacy

Daewon Innost Releases Glaxum LED Array Family of Chip on Board (COB) Modules

Jun 20, 2012

Daewon Innost has made a breakthrough on its Glaxum LED array family of chip on board (COB) modules, which it claims to achieve the LED industry's best thermal dissipation performance. The proprietary Nano-Pore Silicon Substrate (NPSS) ...

Tags: LED, Daewon, performance.

IEMN Has Demonstrated High-Power-Density Nitride High-Electron-Mobility Transistors

Jun 20, 2012

20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...

Tags: GaN/Si HEMTs, IEMN, AlGaN

Daewon Innost Has Recently Launched The Glaxum LED Array Family of Chip-On Board Modules

Jun 18, 2012

Daewon Innost has recently launched the Glaxum LED Array family of Chip-On Board modules.Based on Daewon Innost's proprietary Nano-Pore Silicon Substrate(NPSS)technology,Glaxum arrays ensure superior thermal dissipation ...

Tags: LED Lighting, Daewon Innost, Glaxum LED Arrays, NPSS, LED modules

Lattice Power Corp Started Volume Production of Its High-Power LEDs on Silicon Substrate

Jun 18, 2012

China-based Lattice Power Corp has started volume production of its new-generation gallium nitride(GaN)-based high-power LEDs on silicon substrate.The firm reckons that the development could set the stage for a sharp reduction in the prices ...

Tags: Lattice Power, LED, High-Power, Lighting

Lattice Power Is First and Only Company in Volume Production of GaN-on-Silicon LED Chips

Jun 18, 2012

This development sets the backdrop for a sharp reduction in the prices of energy-efficient LED light bulbs worldwide.Lattice Power is the first and only company in volume production of GaN-on-Silicon LED chip,with products that are ...

Tags: Lattice Power, LEDs, GaN-on-Silicon LED, LED Chips

Lattice Power Declared Commencement of Advanced GaN-Based High Powered LEDs

Jun 14, 2012

Lattice Power recently declared the commencement of large-scale production of its advanced GaN-based high powered LEDs on silicon substrate.Following this development,the cost of energy-efficient LED light bulbs can be reduced significantly ...

Tags: LED Lighting, Lattice Power, GaN-on-Silicon technology, High-Powered LEDs

Lattice Power Has Started Mass Production of Its New Generation Gan-Based High Powered LED

Jun 13, 2012

Lattice Power has started mass production of its new generation GaN-based high powered LEDs on silicon substrates,which sets the backdrop for a sharp reduction in the prices of energy-efficient LED light bulbs worldwide.Lattice Power claims ...

Tags: China, Lattice Power, GaN-on-Si LEDs, LED

Lattice Power Announced The Volume Production of Its Generation GaN-Based High Powered LED

Jun 13, 2012

The pioneer of blue/white gallium nitride-based LEDs on silicon substrate says it is creating the opportunity for a sharp reduction of LED lighting prices Lattice Power Corporation has announced the start of volume production of its new ...

Tags: Market View, led

The Pioneer Is Creating The Opportunity for a Sharp Reduction of LED Lighting Prices

Jun 13, 2012

The pioneer of blue/white gallium nitride-based LEDs on silicon substrate says it is creating the opportunity for a sharp reduction of LED lighting prices Lattice Power Corporation has announced the start of volume production of its ...

Tags: led

This Development Sets The Backdrop for a Sharp Reduction

Jun 13, 2012

Lattice Power Corporation, the world's premier company offering GaN-on-Silicon LED chips, today announced the start of volume production of its new generation GaN-based high powered LEDs on silicon substrate. This development sets the ...

Tags: LED chip

Lattice Power Announced The Start of Volume Production of Its High Powered LEDs

Jun 13, 2012

Lattice Power Corporation, the world's premier company offering GaN-on-Silicon LED chips, today announced the start of volume production of its new generation GaN-based high powered LEDs on silicon substrate. This development sets the ...

Tags: Market View, LED chip

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