Power semi market grows 9%to$18bn in 2011 despite challenges Following a spectacular recovery in 2010,the power semiconductor discrete and module market grew by a more modest 9%in 2011 to just under$18bn,according to the 15th edition of ...
Tags: semiconductor, power modules, manufacturers
Taiwan National Tsing Hua University has used a hybrid ohmic-Schottky drain to reduce buffer leakage and improve breakdown performance in aluminium gallium nitride(AlGaN)semiconductor transistors produced on silicon substrates[Yi-Wei Lian ...
Tags: Nitride HEMTs, Silicon, Taiwan, AlGaN, Semiconductor
AIXTRON SE announced that National Chung Hsing University(NCHU)in Taiwan,has placed an order for one Close Coupled Showerhead(CCS)MOCVD system in a 3x2-inch wafer configuration. NCHU will use the CCS system for conducting research into ...
Tags: Taiwan, AIXTRON SE, NCHU, CCS system, MOCVD, LED
Large-scale adoption of retrofit LED lamps are forecasted to lead to $100 billion in global energy savings over the next five years, according to a recent report from IMS Research based on numerous interviews with leading industry ...
Tags: LED lamp
Silicon Valley-based Gaas Labs LLC,a private investment fund targeting the communications semiconductor market,has acquired privately held Nitronex Corp of Durham,NC,USA,which designs and makes gallium nitride(GaN)-based RF power ...
Tags: Gaas Labs, Nitronex, GaN-on-Si, RF power transistors, semiconducto
Deposition equipment maker Aixtron SE of Herzogenrath,Germany says that new customer National Chung Hsing University(NCHU)in Taiwan has placed an order for a Close Coupled Showerhead(CCS)MOCVD system in 3x2"-wafer configuration. NCHU will ...
Tags: Taiwan, National Chung Hsing University, NCHU, Aixtron, MOCVD
Cree Inc of Durham,NC,USA has released a new suite of Verilog-A proprietary nonlinear device models for its gallium nitride(GaN)RF devices(available free to Cree's RF customers),developed for use with leading RF design platforms from ...
Tags: Cree, GaN, RF devices, Verilog-A RF device models, IMS
22 June 2012 Sandia's InGaN nanowire template permits flexible solar energy absorption Researchers in solar energy want to convert as many of the sun's wavelengths as possible to achieve maximum efficiency.They hence see indium gallium ...
Tags: InGaN nanowire, solar energy, solar cell, MOCVD, photovoltaic systems
22 June 2012 Sumitomo and Sony claim first 100mW true-green 530nm laser diode Tokyo-based compound semiconductor materials provider Sumitomo Electric Industries Ltd(SEI)and Sony Corp say that,by using a semi-polar gallium ...
Tags: laser diode, GaN substrate, semiconductor materials provider, SEI
22 June 2012 Fujitsu develops first high-output,single-chip 10GHz transceiver using GaN HEMT At the IEEE MTT-S International Microwave Symposium(IMS 2012)in Montreal,Canada(17-21 June),Fujitsu Laboratories of Kawasaki,Japan presented what ...
University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...
Tags: Raw Material
21 June 2012 Sumitomo launches next-gen GaN HEMT for L and S-band satellite applications In booth 2003 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),wireless and optical communications ...
Tags: Sumitomo Electric, GaN HEMT, Satellite Applications, IMS 2012
Recognized as a compelling alternative to silicon for many RF applications,gallium nitride(GaN)technology has generated significant industry interest due to its performance advantages,but has faced significant challenges related to ...
Tags: NXP, RF applications, mainstream GaN
Daewon Innost has made a breakthrough on its Glaxum LED array family of chip on board (COB) modules, which it claims to achieve the LED industry's best thermal dissipation performance. The proprietary Nano-Pore Silicon Substrate (NPSS) ...
Tags: LED, Daewon, performance.
Lattice Power says that it is in volume production of high-power gallium nitride LEDs grown on silicon substrates, while Plessey appears to be not far behind. Lattice Power Corporation, a China-based company that is developing gallium ...
Tags: Production, LED, MOCVD system