Epistar and Azzurro have jointly made breakthroughs on developing GaN-on-silicon based LEDs utilising Epistar's HB LED structures and Azzurro's technology for 150mm GaN-on-silicon in just 4 months. The firms transferred Epistar's existing ...
Tags: LED, GaN-on-silicon
ON Semiconductor (Nasdaq: ONNN), a premier global supplier of high performance silicon solutions for energy efficient electronics, has joined the multi-partner, industrial research and development program at imec, a leading nanoelectronics ...
Tags: GaN-on-Si
The Silicon Valley Intellectual Property Law Association named Shuji Nakamura the winner of its Inventor of the Year award for innovations including Soraa's Gan-on-GaN technology. The Silicon Valley Intellectual Property Law Association ...
Tags: LED
Dr.Shuji Nakamura,co-founder of Soraa Inc of Fremont,CA,USA,which develops solid-state lighting technology built on'GaN-on-GaN'(gallium nitride on gallium nitride)substrates,has received the Inventor of the Year Award from The Silicon ...
The next technological challenge for the Solid-state lighting industry is the transition to silicon wafers. Everybody knows that silicon offers many advantages in terms of cost and availability. Nevertheless, the changeover bears many ...
Tags: LED
In well under a decade, LEDs have expanded their role from little red spots which tell you the HiFi is on, to include brilliant white light sources capable of illuminating a room or lighting the road ahead. Production quality LEDs are now ...
Tags: LED
LEDs - or Light-Emitting Diodes – are semiconductors that generate narrow-spectrum light when electrically biased in the forward direction of the p-n junction. This effect is a form of electroluminescence. A single LED is often a ...
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Researchers in China have applied graphene as transparent conducting layers (TCLs) in vertical light-emitting diodes (VLEDs) made from indium gallium nitride (InGaN) semiconductors. The researchers were based in Beijing at Chinese Academy ...
Tags: LED
UK-based Plessey Semiconductors Ltd has been shortlisted in the Electronics Product Category of the British Engineering Excellence Awards 2012,for its new MAGIC(MAnufactured on Gan ICs)High Brightness LED(HB-LED)products.The winners will be ...
Tags: China, British Engineering Excellence Award, HB-LED products
Transphorm Inc of Goleta,near Santa Barbara,CA,USA(which designs and delivers power conversion devices and modules)has been selected by the World Economic Forum as a 2013 Technology Pioneer,citing the firm's innovations in gallium ...
Tags: Transphorm, GaN, HEMTs
UK-based etch,deposition and growth system maker Oxford Instruments Plasma Technology(OIPT),part of Oxford Instruments plc,says that this month saw the 400th sale of its plasma processing tool for HB-LED production,with the receipt of a ...
Tags: OIPT, HB-LED, Revolution
According to Oxford Instruments,it has sold its 400th plasma system to a Chinese HBLED supplier. Dan Ayres,Managing Director of Oxford Instruments Plasma Technology,said that"It gives me a great sense of achievement to say that we have ...
About LEDforum 2012 Taipei Event:LEDforum 2012 Taipei LEDforum 2012 Taipei is a two-day event organized by LEDinside and will be held on November 1st and 2nd at National Taiwan University Hospital International Conference Center.The ...
Tags: LEDforum, Taipei, semiconductor's CTO, npola
Sony's diode lasers claim 2012 Leibinger prize 17 Sep 2012 Mass production of laser diodes and backwards compatible optical data storage recognized with biennial Zukunftspreis. Osamu Kumagai, a senior VP at Sony, has won the 2012 ...
Tags: Sony, Osamu Kumagai, Red Emitters, Blu-ray Disc
Utilizing the company's 150 mm templates the advantages of GaN-on-Si can be gained after very short design-in times. The White Paper outlines technical hurdles to be overcome when migrating to GaN-on-Si, covers key achievements possible ...
Tags: LED