Fairchild Semiconductor of San Jose CA, USA has launched its first 1200V silicon carbide (SiC) diode, the FFSH40120ADN, in its series of upcoming SiC solutions. The 1200V diode's combination of switching performance, reliability and low ...
Tags: Fairchild
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced its Phase Seven Reliability ...
Tags: EPC, E-mode GaN FETs, GaN-on-Si
In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
Osram Opto Semiconductors GmbH of Regensburg, Germany says that its new TEN° binning provides the basis for what is claimed to be unprecedented color consistency for white LEDs, used for example as single-LED light sources in spotlights ...
LED maker Lumileds of San Jose, CA, USA has introduced the LUXEON 2835 line as an upgrade for an industry-standard LED package. LUXEON 2835 LEDs is available in five configurations of light output and string voltage and ESD protection for ...
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that, as of the end of 2015, it had shipped gallium nitride on ...
Tags: Wolfspeed, Research Triangle Park
Barron Lighting Group, the originator of the LED exit sign and brands such as Exitronix, Trace*Lite, IGS and specialtyLED, is excited to launch the newest addition to the Exitronix VEX-WP series is the VEX-WPC. This wet location all-LED ...
Tags: Barron Lighting Group, All-LED, VEX-WPC
X-FAB Silicon Foundries of Erfurt, Germany - a mixed-signal IC, sensor and micro-electro-mechanical systems (MEMS) foundry – has entered wide-bandgap semiconductor production by announcing the availability of silicon carbide (SiC) ...
Tags: SiC MOSFET SiC Schottky barrier diodes SiC power devices
At the Light + Building 2016 trade fair in Frankfurt, Germany (13-18 March), Osram Opto Semiconductors GmbH of Regensburg, Germany is unveiling its Duris P 10 LED, suitable for use in professional outdoor lighting systems. Offering typical ...
GlobalFoundries of Santa Clara, CA, USA (one of the world's largest semiconductor foundries, with more than 250 customers and operations in Singapore, Germany and the USA) has announced the availability of a new set of process design kits ...
Taiwan-based Everlight Electronics Co Ltd has updated its range of top-view, white, low- to mid-power LEDs in 2835 form-factor (2.8mm x 3.5mm x 0.7mm) packages by adding versions operating at three voltages 3V, 6V, 9V at 0.5W and two ...
Taiwan-based Everlight Electronics Co Ltd has launched the Shwo F-ELB high-power LED series, the latest and most powerful update to its existing high-power and bright Shwo LED Series. F-ELB LEDs features flip-chip technology to enable ...
The expanded series now includes 10 pump families covering the most popular hydraulic performance ranges with models from 3 through 75 hp, flow ratings from 50 through 2,000 gpm, and heads up to 300 feet. Each AG Series Pump is equipped ...
Tags: Franklin Electric, AG, Expansion
The universities of Virginia and of Texas in the USA have been developing avalanche photodiodes (APDs) based on aluminium indium arsenide antimonide (AlInAsSb) alloys. Two papers from the group detail the implementation of a staircase ...
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE