UK-Sennheiser UK has announced that,from 1 June 2012,it will be the official distributor for Avalon Design products in the UK and Ireland. Used in many of the world's top recording studios,Avalon products include rackmount ...
Tags: Sennheiser, UK, Avalon Design products, audio
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has announced initial sample availability ...
Recognized as a compelling alternative to silicon for many RF applications,gallium nitride(GaN)technology has generated significant industry interest due to its performance advantages,but has faced significant challenges related to ...
Tags: NXP, RF applications, mainstream GaN
20 June 2012 Toshiba adds gain-and efficiency-optimized C-band GaAs FET PAs for microwave radio and BUCs In booth 710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaAs FET PAs, IMS 2012, microwave radio, BUCs
20 June 2012 Mitsubishi develops 170W,70%-efficiency GaN-on-Si PA for base-station transmitters Picture:Mitsubishi Electric's 170W,2.1GHz GaN-on-Si power amplifier. Tokyo-based Mitsubishi Electric Corp has developed a prototype 2GHz ...
Tags: Mitsubishi Electric Corp, GaN-on-Si PA, base-station transmitters
20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN
20 June 2012 Avago launches wireless products for3G/4G small-cell base stations and portable GPS systems Avago Technologies(which supplies wireless components for cellular base stations,macrocells,other communications subsystems,and ...
Tags: Avago, wireless products, GPS systems
Toshiba America Electronic Components Inc(TAEC)-a subsidiary of Tokyo-based semiconductor maker Toshiba Corp-has announced a Ka-band high-power gallium nitride(GaN)microwave monolithic integrated circuit(MMIC)with what it claims is one of ...
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has launched two gallium arsenide power ...
Cree Inc of Durham,NC,USA has launched a 40V,0.25µm,GaN-on-SiC HEMT process die product family,with power and bandwidth capabilities through the Ku-band that enables the replacement of travel-wave tubes with solid-state ...
Tags: Cree, GaN-on-SiC, HEMT, Amplifier
Cree Inc of Durham,NC,USA has announced the qualification and production release of two new gallium nitride(GaN)processes:G40V4(a 0.25µm process with operating drain voltage up to 40V)and G50V3(a 0.4µm process with operating ...
Monolithic microwave integrated circuit developer Custom MMIC of Westford,MA,USA is offering two new devices from its growing MMIC design library.The CMD157(die)and CMD157P3(packaged)are gallium arsenide(GaAs)MMIC low-noise ...
Tags: Custom MMIC, GaAs, LNA, Microwave
RF and mixed-signal semiconductor maker Anadigics Inc of Warren,NJ,USA has launched the AWB7125 and AWB7225 small-cell power amplifiers(PAs),optimized for Band 5 WCDMA and LTE applications including picocells,enterprise-class femtocells,and ...
Tags: Anadigics, WCDMA, LTE Application, PA
In conjunction with exhibiting in stand Q35,hall 10.1 at the ANGA Cable Show trade fair for cable,broadband and satellite in Cologne,Germany(12-14 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc ...
Tags: TriQuint, CATV/FTTH RF Amplifiers, Power, Materials
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has launched what is claimed to be the first 802.11ac-ready Wi-Fi RF module for next-generation mobile devices.In addition to ...
Tags: TriQuint, Wi-Fi, Mobile Device, Download