Researchers in China have applied graphene as transparent conducting layers (TCLs) in vertical light-emitting diodes (VLEDs) made from indium gallium nitride (InGaN) semiconductors. The researchers were based in Beijing at Chinese Academy ...
Tags: LED
In response to the government's decision to postpone an increase in power prices originally scheduled for the December 10, 2012, Taiwan-based LED chip packaging company Everlight Electronics indicated that the LED lighting market in Taiwan ...
Tags: LED lighting
Lextar to merge with Wellypower Siu Han, Taipei; Jackie Chang, DIGITIMES [Friday 14 September 2012] Taiwan-based LED maker Lextar, a subsidiary of AU Optronics (AUO), on September 13, 2012 announced plans to merge with Wellypower, a CCFL ...
Tags: AUO, LED, Lextar, Wellypower, Taiwan
Nanotronics Imaging LLC of Cuyahoga Falls,OH,USA has introduced new capabilities for its nSPEC product,a fully automatic inspection system for analyzing transparent and semi-transparent wafers for defects. nSPEC now detects and ...
Tags: Nanotronics, Automated wafer inspection system, SiC, GaN, GaAs, InP
AZZURRO Semiconductors AG of Dresden,Germany,which makes gallium nitride(GaN)epitaxial wafers based on large-area silicon substrates,has released a white paper that describes the easy migration of LED manufacturing to GaN-on-Si.Using its ...
Tags: AZZURRO, GaN-on-Si LEDs, Dresden, DTF, Taipei
In this week's update:Are GaN-on-GaN LEDs closer to reality than previously thought?Update on our latest Webcast;DOE updates its SSL manufacturing roadmap;and OLEDs still trail LEDs in cost,but Plextronics hopes to change that. Back at ...
Sapphire substrate makers report mixed August revenues Siu Han,Taipei;Jackie Chang,DIGITIMES[Wednesday 12 September 2012]Sapphire substrate firms such as Crystalwise and Crystal Applied have both reported on-month decreases in August ...
Tags: LED, Lighting, Sapphire Substrate
NTNU researchers have patented and are commercializing GaAs nanowires grown on graphene,a hybrid material with competitive properties.Semiconductors grown on graphene are expected to become the basis for new types of device systems,and ...
(China Glass Network) China has become the manufacturing giant all over the world, domestic glass manufacturing industry has not get rid of the development model of extensive form and epitaxial type. Lacking of core and key technology and ...
Tags: Construction, Decoration, Glass Edging, China Glass Network
China's Nantong Tongfang Semiconductor Co Ltd has received shipment of a TurboDisc K465i MOCVD system from epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA. The system will be used to research ...
Tags: MOCVD
Agnitron Technology, Inc. has completed the development of the original state of the art compact MOCVD research and development system, known as Agilis. The small volume reactor system provides an economical choice to universities and ...
Tags: MOCVD
Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
Brewer Science,which is engaged in developing specialty materials,integrated processes,and laboratory-scale wafer processing equipment,will feature two conference presentations at SEMICON Taiwan being held between 5th and 7th,September. ...
Taiwan researchers have achieved a reduction in luminous efficiency droop from 42%to 7%by inserting p-type indium gallium nitride(p-InGaN)between the active light-emitting and electron-blocking layers of a nitride semiconductor ...
Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs ...
Tags: Wafer