Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...
Tags: GaN, Power electronics
Matheson Tri-Gas Inc of Basking Ridge, NJ, USA, together with its parent company Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan, says that the Solid State Lighting & Energy Electronics Center (SSLEEC) at the University of California, Santa ...
Tags: Matheson, Taiyo Nippon Sanso, MOCVD, UVC LEDs
GE Aviation (an operating unit of GE) has been awarded a $2.1m contract from the US Army to develop and demonstrate silicon carbide (SiC)-based power electronics supporting high-voltage next-generation ground vehicle electrical power ...
Tags: GE Aviation, SiC power devices
UK-based Cobham plc (which designs and manufactures equipment, specialized systems and components for the aerospace, defense, energy and electronics industries) has established a strategic partnership to incorporate the gallium nitride ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has announced its support for advances in color science and the new TM-30 method released ...
Tags: Soraa, GaN-on-GaN
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that, as of the end of 2015, it had shipped gallium nitride on ...
Tags: Wolfspeed, Research Triangle Park
Nanoelectronics research center imec of Leuven, Belgium has opened its new 300mm cleanroom. With this 4000m2 new facility, imec's semiconductor research cleanrooms (dedicated to scaling IC technology beyond 7nm) now total 12,000m2. Global ...
South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...
Samsung Electronics Co Ltd of Seoul, South Korea has introduced a full line-up of chip-scale LED packages (CSP), including 0.6W-class and 3W-class packages, CSP arrays, and PoW (Phosphor on Wafer) packages. Samsung says that its CSP ...
At the Light + Building 2016 trade fair in Frankfurt, Germany (13-18 March), UK-based Plessey Semiconductors Ltd is releasing its new LED beam control module. Stellar is the firm's latest GaN-on-silicon LED solution and showcases the ...
Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...
Tags: Semiconductor Market, GaN, SiC
At the Pittcon conference in Atlanta (6-10 March), laser-based trace gas analyzer manufacturer Tiger Optics LLC of Warrington, PA, USA exhibited the new ALOHA+ H2O analyzer, which refines the detection of moisture in ammonia to levels down ...
Tags: Tiger Optics, Analyser, HB LED
At the Strategies in Light conference in Santa Clara (1-3 March), SoraaLaser of Goleta, CA, USA (which is commercializing visible laser light sources for display, automotive and specialty applications) is presenting its light source ...
Tags: Soraa GaN-on-GaN
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has added both lower- and higher-wattage 120V MR16 GU10 LED lamps to its product portfolio. ...
Tags: Soraa GaN-on-GaN
In booth #2244 at the 31st IEEE Applied Power Electronics Conference and Exposition (APEC 2016) in Long Beach (20-24 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on ...
Tags: GaN FETs, DC-DC Converter