Cree Inc of Durham, NC, USA claims to have shattered the on-resistance barrier of traditional 1200V MOSFET technology by introducing the first commercially available silicon carbide (SiC) 1200V MOSFET with an RDS(ON) of 25mΩ in an ...
Tags: Cree SiC MOSFET, Electrical, Electronics
Cree Inc of Durham, NC, USA says that its silicon carbide (SiC) technology continues to enable smaller, lighter, more efficient and lower-cost power systems with a new all-SiC 300A, 1.2kV half-bridge module. Packaged in an industry-standard ...
Tags: Electrical, Electronics, Module
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9016 half-bridge ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9013 development ...
Tags: EPC E-mode GaN FETs
Global electronic components distributor Digi-Key Corp of Thief River Falls, MN, USA has announced new inventory of gallium nitride (GaN) power management products, available for immediate shipment as part of an exclusive global ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has extended its range of high-speed, ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2016 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs). The EPC2016 is a ...
Tags: Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC9107, a fully functional buck power conversion demonstration circuit. The board is a 9-28 V input to 3.3V, 15A maximum output current, 1MHz buck converter.It ...
Tags: EPC, E-mode GaN FETs, Electrical&Electronics
EVERLIGHT had introduced the latest of new series of LED components products at 2013 LED Expo in Korea. EVERLIGHT presents whole series of packages for different applications including automotive, digital display, flash light, infrared ...
Tags: LED, Lights, Lighting, LED components
EVERLIGHT ELECTRONICS CO., LTD., a leading player in the global LED and optoelectronics industry with three decades of experience, had introduced the latest of new series of LED components products at 2013 LED Expo in Korea. EVERLIGHT ...
New RPI research proves the concept of integrating LED emitters on the same chip with other electronic components such as transistors, while other new research focuses on maximizing the light extraction efficiency of LEDs and lowering cost ...
To address the increasing demands from the developing market in Thailand, EVERLIGHT presents its full offering of LED lighting components, LED digital displays, Automotive LEDs and Infrared LEDs at this year’s LED EXPO THAILAND to ...
Tags: EVERLIGHT, LED Components
Showcases new series Mid-Power LED components for lighting solutions such as tube light and streetlight applications in 2013 LED EXPO Mumbai, after successful exhibition experience in LED EXPO New Delhi. Moreover, EVERLIGHT has made an ...
Tags: LED lighting, LED, LED Components
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that its EPC9005 development board featuring the firm’s 40V EPC2014 enhancement-mode gallium nitride (eGaN) field-effect transistors (FETs) – as launched in ...
Tags: Power Conversion, GaN devices
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC9010 development board to make it easier for engineers to start designing with a 100V enhancement-mode gallium nitride (eGaN) field-effect transistor (FET) ...
Tags: EPC, Power Conversion, eGaN FETs