Intermolecular Inc of San Jose,CA,USA has announced an ongoing project with King Abdullah University of Science and Technology(KAUST)for the enhancement of copper indium gallium diselenide(CIGS)thin-film photovoltaic(PV)manufacturing ...
Tags: Intermolecular, CIGS, KAUST
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
The eye has inspired robot vision steering at Georgia Tech. Key to the control system is a muscle-like piezoelectric actuator. In muscle,many small actuator units are connected in series or in parallel. "The actuators developed in ...
Tags: robot, IEEE, actuator units, vision
UCSB receives $500,000 for SSLEC as James Speck named Seoul Optodevice chair in solid-state lighting At University of California Santa Barbara (UCSB) the Solid State Lighting and Energy Centre (SSLEC), a hub for research in ...
Tags: GaN LEDs
RF Micro Devices Inc of Greensboro,NC,USA says that its new RF5836 provides a complete integrated solution in a single front-end module(FEM)for WiFi 802.11a/n systems. The RF5836 integrates a 5GHz power amplifier(PA),single-pole ...
Tags: Front-End Module, Power Amplifier, Mobile Devices, Consumer Electronics
New email-based attacks, some of which target the aerospace industry, are distributing new variants of the Sykipot information stealing malware, according to researchers from security firm AlienVault. "We have detected a new wave of ...
Taiwan National Tsing Hua University has used a hybrid ohmic-Schottky drain to reduce buffer leakage and improve breakdown performance in aluminium gallium nitride(AlGaN)semiconductor transistors produced on silicon substrates[Yi-Wei Lian ...
Tags: Nitride HEMTs, Silicon, Taiwan, AlGaN, Semiconductor
Cree Inc of Durham,NC,USA has released a new suite of Verilog-A proprietary nonlinear device models for its gallium nitride(GaN)RF devices(available free to Cree's RF customers),developed for use with leading RF design platforms from ...
Tags: Cree, GaN, RF devices, Verilog-A RF device models, IMS
22 June 2012 Peregrine adds new 8GHz SP4T RF switch to portfolio At this week's 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),Peregrine Semiconductor Corp of San Diego,CA,USA,a fabless provider of ...
Tags: Peregrine, IMS 2012, 8GHz SP4T RF switch, UltraCMOS technology
22 June 2012 Peregrine introduces its highest-linearity switches for 4G LTE At this week's 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),Peregrine Semiconductor Corp of San Diego,CA,USA,a fabless ...
Tags: 4G LTE, IMS 2012, highest-linearity switches, Peregrine
22 June 2012 Fujitsu develops first high-output,single-chip 10GHz transceiver using GaN HEMT At the IEEE MTT-S International Microwave Symposium(IMS 2012)in Montreal,Canada(17-21 June),Fujitsu Laboratories of Kawasaki,Japan presented what ...
21 June 2012 Sumitomo launches next-gen GaN HEMT for L and S-band satellite applications In booth 2003 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),wireless and optical communications ...
Tags: Sumitomo Electric, GaN HEMT, Satellite Applications, IMS 2012
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has announced initial sample availability ...
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),Germany's Infineon Technologies AG has launched the BFx840xESD series of SiGe:C(silicon-germanium:carbon)heterojunction bipolar ...
Tags: Infineon, transistors, WiFi
Recognized as a compelling alternative to silicon for many RF applications,gallium nitride(GaN)technology has generated significant industry interest due to its performance advantages,but has faced significant challenges related to ...
Tags: NXP, RF applications, mainstream GaN