Chinese LED chip manufacturer HC Semitek announced recently, the company received RMB 6 Million (US$ 990,000) MOCVD subsidy from China’s Ministry of Industry and Information Technology (MIIT). The subsidy that was recently approved by ...
Tags: MOCVD Subsidy, LED chip
China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs
San’an has recently released their 3Q13 financial report. The first three quarters of the year saw a revenue of RMB 2.63 billion (US $431 million), a YoY growth of 11.86 percent. Gross profit margin was RMB 761 million, a YoY growth ...
Tags: LED Market, Chip
LayTec AG of Berlin, Germany, which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications, says that researchers at Germany's Ulm University have used LayTec's EpiCurve TT ...
Tags: LayTec HVPE GaN, Electrical, Electronics
For third-quarter 2013, Rubicon Technology Inc of Bensenville, IL, USA (which makes monocrystalline sapphire substrates and products for the LED, RFIC, semiconductor and optical industries) has reported revenue of $11.1m, down 45% on $19.9m ...
Chinese Academy of Sciences' Semiconductor Lighting R&D Center at the Institute of Semiconductors in Beijing has developed an electrically driven color-tunable light-emitting diode (LED) based on indium gallium nitride (InGaN) quantum wells ...
Tags: LED, Electrical, Electronics, Semiconductor
Researchers in Taiwan have used a palladium oxide (PdO) gate interlayer to improve nitride semiconductor high-electron-mobility transistor (HEMT) performance [Ray-Ming Lin et al, Jpn. J. Appl. Phys., vol52, p111002, 2013]. In particular, ...
Tags: HEMT MOCVD GaN, Electrical, Electronics
Chinese LED manufacturer Elec-Tech released their 3Q financial report on October 29th, 2013. Revenue for 3Q reached RMB 916 million (US $150 million), a growth of 27.15 percent compared to 3Q last year, a gross profit margin of RMB 2.44 ...
LG Electronics Materials and Components Laboratory in South Korea has used aluminium gallium nitride (AlGaN) superlattice structures (SLs) to improve lateral current spreading from the n-side of nitride semiconductor light-emitting diodes ...
Tags: Nitride LEDs, Light
LayTec is proud to announce that Epistar Corp. has qualified LayTec’s in-situ metrology Pyro 400 for its GaN LED production. The LED manufacturer based in Taiwan will not use high accuracy GaN surface temperature sensing with Pyro ...
Tags: GaN LED Production, Lighting
LayTec AG of Berlin, Germany, which makes in-situ metrology systems for thin-film processes focusing on compound semiconductor and photovoltaic applications, says that Epistar Corp (Taiwan's largest LED chipmaker) has qualified the Pyro 400 ...
Tags: LED, Electrical, Electronics, semiconductor, photovoltaic applications
For third-quarter 2013, deposition equipment maker Aixtron SE of Aachen, Germany has reported revenue of €46.2m, down 26% on €62.2m a year ago but up slightly on €45.3m last quarter. In spite of the lower percentage of ...
Tags: Aixtron MOCVD, Electrical, Electronics
Demand for sapphire for use in handsets is estimated to grow 25-30%, according to US-based crystal growth equipment and solution provider GT Advanced Technologies (GTAT). GTAT has been promoting HVPE (hydride vapor phase epitaxy) GaN ...
Tags: Lights, Lighting, crystal growth equipment
With the unchanging trend of falling LED prices, chip manufacturers are constantly improving LED chip production process and technologies to lower costs. Semiconductor equipment company GT Advanced Technologies (GTAT) has developed Hydride ...
Reshuffling in the LED chip manufacturing industries in Taiwan and China through merger may happen faster than originally expected and larger makers will merge with smaller ones, leaving only two Taiwan-based makers and three China-based ...
Tags: LED Chip, LED packaging