Dr.Shuji Nakamura,co-founder of Soraa Inc of Fremont,CA,USA,which develops solid-state lighting technology built on'GaN-on-GaN'(gallium nitride on gallium nitride)substrates,has received the Inventor of the Year Award from The Silicon ...
Sp3 Diamond Technologies Inc of Santa Clara,CA,USA,a supplier of chemical vapor deposition(CVD)diamond film products,equipment and services to markets including electronics,lasers,LEDs,semiconductors and MEMS,has been awarded two patents by ...
Tags: sp3 Diamond, CVD, CTE, US
LEDs - or Light-Emitting Diodes – are semiconductors that generate narrow-spectrum light when electrically biased in the forward direction of the p-n junction. This effect is a form of electroluminescence. A single LED is often a ...
Tags: LED
Driven by market demand, the semiconductor industry progressed toward consensus on building-block standards for automating LED production on 6-in wafers at the Semicon West conference, explains PAULA DOE. ...
Tags: LED
Researchers in China have applied graphene as transparent conducting layers (TCLs) in vertical light-emitting diodes (VLEDs) made from indium gallium nitride (InGaN) semiconductors. The researchers were based in Beijing at Chinese Academy ...
Tags: LED
UK-based Plessey Semiconductors Ltd has been shortlisted in the Electronics Product Category of the British Engineering Excellence Awards 2012,for its new MAGIC(MAnufactured on Gan ICs)High Brightness LED(HB-LED)products.The winners will be ...
Tags: China, British Engineering Excellence Award, HB-LED products
Transphorm Inc of Goleta,near Santa Barbara,CA,USA(which designs and delivers power conversion devices and modules)has been selected by the World Economic Forum as a 2013 Technology Pioneer,citing the firm's innovations in gallium ...
Tags: Transphorm, GaN, HEMTs
UK-based etch,deposition and growth system maker Oxford Instruments Plasma Technology(OIPT),part of Oxford Instruments plc,says that this month saw the 400th sale of its plasma processing tool for HB-LED production,with the receipt of a ...
Tags: OIPT, HB-LED, Revolution
Sony's diode lasers claim 2012 Leibinger prize 17 Sep 2012 Mass production of laser diodes and backwards compatible optical data storage recognized with biennial Zukunftspreis. Osamu Kumagai, a senior VP at Sony, has won the 2012 ...
Tags: Sony, Osamu Kumagai, Red Emitters, Blu-ray Disc
AZZURRO Semiconductors AG of Dresden,Germany,which makes gallium nitride(GaN)epitaxial wafers based on large-area silicon substrates,has released a white paper that describes the easy migration of LED manufacturing to GaN-on-Si.Using its ...
Tags: AZZURRO, GaN-on-Si LEDs, Dresden, DTF, Taipei
Companies that are developing LED lighting products need to have an awareness of the wider patent landscape to help them develop,protect and exploit their own intellectual property to its fullest,as JACKIE MAGUIRE and DAVID SEGAL explain. ...
Tokyo-based Mitsubishi Electric Corp has developed the MGFK47G3745 gallium nitride(GaN)high-electron-mobility transistor(HEMT)Ku-band(12–18GHz)amplifier for satellite earth stations. Picture:Simplified schematic of amplifier. ...
Tags: Electrical, Mitsubishi, Electric
Kyma's GaN crystal growth system is based on the hydride vapor phase epitaxy(HVPE)growth process which is a proven high growth rate approach for producing high purity crystalline compound semiconductor materials including GaN,GaAs,InP,and ...
Tags: Metallurgy, Crystal, Materials
China's Nantong Tongfang Semiconductor Co Ltd has received shipment of a TurboDisc K465i MOCVD system from epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA. The system will be used to research ...
Tags: MOCVD
Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors