Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology fabricated on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, says that its LED lamps have been installed at the University of Oxford's Pitt Rivers ...
Tags: Soraa, GaN-on-GaN, Oxford, LED Lighting
Led by adoption across various market segments, the gallium nitride (GaN) RF device market will double over the next five years, reckons Yole Développement in its new report 'GaN RF Devices Market: Applications, Players, Technology, ...
Eulitha AG of Würenlingen, Switzerland (a spin-off of the Paul Scherrer Institute in Villigen that offers nano-lithographic equipment and services for photonics and optoelectronic applications) says that one of its PhableR 100 ...
Tags: Eulitha, Nanopatterning HB-LEDs
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
WIN Semiconductors Corp of Tao Yuan City, Taiwan – the largest pure-play provider of compound semiconductor wafer foundry services – has announced its entry into the high-data-rate optical device market by adding optical device ...
Tags: WIN Semiconductors, InP
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched the 2500-G Series 50W Ku-band gallium nitride (GaN)-based airborne-grade solid-state power block/block up-converter ...
Tags: GaN HEMT, Advantech Wireless
Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...
Tags: GaN, Power electronics
Matheson Tri-Gas Inc of Basking Ridge, NJ, USA, together with its parent company Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan, says that the Solid State Lighting & Energy Electronics Center (SSLEEC) at the University of California, Santa ...
Tags: Matheson, Taiyo Nippon Sanso, MOCVD, UVC LEDs
GE Aviation (an operating unit of GE) has been awarded a $2.1m contract from the US Army to develop and demonstrate silicon carbide (SiC)-based power electronics supporting high-voltage next-generation ground vehicle electrical power ...
Tags: GE Aviation, SiC power devices
UK-based Cobham plc (which designs and manufactures equipment, specialized systems and components for the aerospace, defense, energy and electronics industries) has established a strategic partnership to incorporate the gallium nitride ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced its Phase Seven Reliability ...
Tags: EPC, E-mode GaN FETs, GaN-on-Si
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has announced its support for advances in color science and the new TM-30 method released ...
Tags: Soraa, GaN-on-GaN
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that, as of the end of 2015, it had shipped gallium nitride on ...
Tags: Wolfspeed, Research Triangle Park
Nanoelectronics research center imec of Leuven, Belgium has opened its new 300mm cleanroom. With this 4000m2 new facility, imec's semiconductor research cleanrooms (dedicated to scaling IC technology beyond 7nm) now total 12,000m2. Global ...
South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...