Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...
Tags: semiconductor, MOCVD
In the presentation ‘Low vertical leakage current of 0.07μm/mm2 at 600V without intentional doping for 7μm-thick GaN-on-Si’ at the 12th International Conference on Nitride Semiconductors (ICNS-12) in Strasbourg, France ...
Tags: technology engineering, epiwafer
Process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that ultraviolet short-wavelength light-emitting diodes (UV-C LEDs) research firm CrayoNano AS of Trondheim, Norway - which was founded in June 2012 based on research ...
Tags: UV-C LED, Graphene Growth
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says that, for first-half 2017, it expects revenue of about £70m, reflecting increased sales in each of its three primary markets. “All business units have ...
Yole Développement’s ‘RF Power Market and Technologies 2017: GaN, GaAs and LDMOS Report’ forecasts that, after shrinking in 2015 and 2016 as telecom operators invested less, the total RF power semiconductor market ...
Tags: Semiconductor, 4G networks
The US Naval Research Laboratory (NRL) has demonstrated the ability to grow thin films of the transition-metal nitride Nb2N (niobium nitride). The thin crystalline material has a similar structure to gallium nitride (GaN), but its ...
Tags: Thin-Film Niobium Nitride, LED
Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland, Taiwan’s National Chiao Tung University (NCTU) and Atom Semicon Co Ltd of New Taipei City, Taiwan have begun a joint collaboration on the ...
Navitas Semiconductor Inc of El Segundo, CA, USA has expanded its support in Asia by entering two new distribution partnerships for its gallium nitride (GaN) power ICs. By partnering with Myland Technologies Inc and Allied Group (HK) Ltd, ...
Tags: GaN Power, IC Adoption
Texas Instruments Inc (TI) has launched a three-phase, gallium nitride (GaN)-based inverter reference design that helps engineers build 200V, 2kW AC servo motor drives and next-generation industrial robotics with fast current-loop control, ...
Tags: GaN Inverter, AC Servo Drives
The Optoelectronics group of Vishay Intertechnology Inc of Malvern, PA, USA has launched a new series of true green LEDs in a compact surface-mount 0603 ChipLED package. Measuring 1.6mm by 0.8mm with an ultra-thin 0.55mm profile, the ...
Tags: ChipLED Package, package
Spending on RF high-power semiconductors for the wireless infrastructure markets continues to flatten out in 2017, despite the fact that the overall market hit well over $1.4bn in 2016, according to ABI Research. While certain market and ...
Tags: GaN, High-Power Semiconductor
MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has unveiled a development kit targeted at helping ...
Tags: RF Systems, power transistors
Seren Photonics Limited, based near Cardiff, Wales, UK, a developer of semipolar gallium nitride and BluGlass Limited of Silverwater, Australia, a developer of semiconductor manufacturing process and equipment have announced the completion ...
Tags: Seren Photonics, LED
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the EPC2111, a 30V ...
Tags: transistors, GaN transistor
Navitas Semiconductor Inc of El Segundo, CA, USA has announced the availability of a 150W AC-DC reference design utilizing its gallium nitride (GaN) power ICs. With a power density of more than 21W/inches3 and efficiency of more than 95%, ...
Tags: LED TV, laptop adapter