Soraa has recently released the first GaN on GaN LED in a 50W halogen equivalent MR16 lamp with several new features.This LED has a gallium nitride substrate, triangular shaped chip, simplified epitaxial structure and an original ...
Gallium-nitride-on-silicon architecture inches closer to sapphire-based LED performance levels but a significant gap remains. Plessey Semiconductors has announced the PLB010350 LED that it is manufactured on its gallium-nitride-on-silicon ...
New advancements in LED technology have allowed for it once more to step up its game. The Smart Lighting Engineering Research Center of Rensselaer Polytechnic Institute?recently announced that they have successfully created "the first ...
Tags: LED, Lights, Lighting, Smart Lighting
More than 100 billion gallium nitride light-emitting diodes (GaN LED) will ship in 2013 - the equivalent of 15 for every person on the planet using this particular type of lighting device incorporating the GaN semiconductor material, ...
GaN LEDs set to top 100 billion units 25 Jun 2013 Shipments of the blue-emitting chips will reach new milestone this year, reports analyst company IHS. Analysts at the market forecasting company IMS Research (part of IHS) are expecting ...
It is reported that Hong Kong University of Science and Technology (HKUST) has developed silicon substrate green and yellow nitride semiconductor LEDs. Details of the development were published in the May 29th issue of IEEE Electronic ...
Tags: HKUST, Lighting, Semiconductor, LED
Raytheon Company of Waltham, MA, USA has been honored by the Office of the Secretary of Defense (OSD) for successful completion of a Defense Production Act (DPA) Title III gallium nitride (GaN) production improvement program, culminating ...
Tags: GaN Production, Electrical
New RPI research proves the concept of integrating LED emitters on the same chip with other electronic components such as transistors, while other new research focuses on maximizing the light extraction efficiency of LEDs and lowering cost ...
Deposition equipment maker Aixtron SE of Herzogenrath, Germany has been awarded the 2013 LEDinside Aurora Award in the category “Most efficient MOCVD Equipment”. Aixtron received the award for its AIX G5+ MOCVD system for growth ...
Tags: Aixtron, MOCVD System
Fujitsu Laboratories of Kawasaki, Japan has developed compact gallium nitride high-electron-mobility transistor (HEMT)-based transceiver module technology with an output of 10W operating at frequencies up to the millimeter-wave band. ...
Tags: Fujitsu GaN HEMT, Electrical, Electronics
Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...
Tags: UV-LEDs, Electrical, Electronics
The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) has demonstrated the first monolithic integration of LED and high electron mobility transistor (HEMT) on the same gallium nitride (GaN) chip. It is ...
Tags: Smart Lighting, Lights, Lighting, LED Lighting
Chinese Academy of Sciences’ Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) has extended its work on double-gated nitride semiconductor high-electron-mobility transistors (DG-HEMTs) [Guohao Yu et al, IEEE Electron Device ...
Tags: Nitride HEMTs, Electrical
In response to SSL Manufacturing R&D funding opportunity announcement (FOA) DE-FOA-0000792, the US Department of Energy (DOE) has announced the competitive selection of five projects for solid-state lighting (SSL), involving a total of ...
Tags: Lumileds Lighting, Electrical
The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) in Troy, NY, USA has demonstrated what is reckoned to be the first monolithically integrated light-emitting diode (LED) and high-electron-mobility ...
Tags: Smart Lighting, GaN Chip