National Chung Hsing University in Taiwan has developed a simple silane treatment to improve crystal quality/internal quantum efficiency (IQE) and light extraction in nitride semiconductor light-emitting diodes (LEDs) [Chung-Chieh Yang et ...
Tags: LED
Researchers in China have improved LED power output and droop behavior in nitride semiconductor light-emitting diodes (LEDs) by including an electron-emitting layer under the active region [Jianbao Zhang et al, Appl. Phys. Express, vol5, ...
Rensselaer Polytechnic Institute (RPI) and Samsung Electronics have used tapered micro-pillars of titanium dioxide (TiO2) to increase light extraction from nitride semiconductor light-emitting diodes (LEDs) by up to 100% [Ming Ma et al, ...
Tags: LEDs
Epistar hints at'game-changing'silicon LED switch 12 Oct 2012 Giant Taiwanese LED maker works with GaN-on-silicon specialist Azzurro on technology with potential to cut cost of solid-state lighting. Plessey's GaN-on-silicon LED ...
Tags: LED, Taiwan, technology, manufacture
Researchers in China have applied graphene as transparent conducting layers (TCLs) in vertical light-emitting diodes (VLEDs) made from indium gallium nitride (InGaN) semiconductors. The researchers were based in Beijing at Chinese Academy ...
Tags: LED
Companies that are developing LED lighting products need to have an awareness of the wider patent landscape to help them develop,protect and exploit their own intellectual property to its fullest,as JACKIE MAGUIRE and DAVID SEGAL explain. ...
Taiwan researchers have achieved a reduction in luminous efficiency droop from 42%to 7%by inserting p-type indium gallium nitride(p-InGaN)between the active light-emitting and electron-blocking layers of a nitride semiconductor ...
Researchers in Korea have been studying how to improve graphene transparent conducting layers(TCLs)using gold nanoparticle(Au-NP)decoration.The team was variously associated with Gwangju Institute of Science and Technology,Korea Basic ...
University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...
Tags: Raw Material