Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched a dual-band single-pole four-throw (SP4T) WiFi switch with integrated GPIO interface and 50 Ohm match on all RF output ports. ...
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE42723, an RF switch with what is claimed ...
Tags: Peregrine, SOI, RF switches
NeoPhotonics Corp of San Jose, CA, USA (a vertically integrated designer and manufacturer of hybrid photonic integrated optoelectronic modules and subsystems for high-speed communications networks) has launched 1310nm and 1550nm high-power ...
Tags: NeoPhotonics, PICs
Acquisitions are an almost weekly occurrence in Silicon Valley, but Apple’s next scoop could be closer to home. Apple is said to be in “advanced talks” to buy Imagination Technologies, a UK-based chip design firm partly ...
GlobalFoundries of Santa Clara, CA, USA (one of the world's largest semiconductor foundries, with more than 250 customers and operations in Singapore, Germany and the USA) has announced new radio-frequency silicon solutions, further ...
Tags: Wireless Devices, semiconductor
Nanoelec Research Technological Institute (IRT) in Grenoble, France - an R&D consortium headed by CEA-Leti focused on information and communication technologies (ICT) using micro- and nanoelectronics - has announced the first co-integration ...
Tags: III-Vs-on-Si, Direct wafer bonding
Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...
Tags: GaN, Power electronics
GE Aviation (an operating unit of GE) has been awarded a $2.1m contract from the US Army to develop and demonstrate silicon carbide (SiC)-based power electronics supporting high-voltage next-generation ground vehicle electrical power ...
Tags: GE Aviation, SiC power devices
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) has announced its line-up of fiber-optic transceivers designed to drive the data-center transition from 40Gb/s to 100Gb/s and ...
Tags: Oclaro, Transition, OFC
Fairchild Semiconductor of San Jose CA, USA has launched its first 1200V silicon carbide (SiC) diode, the FFSH40120ADN, in its series of upcoming SiC solutions. The 1200V diode's combination of switching performance, reliability and low ...
Tags: Fairchild
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced its Phase Seven Reliability ...
Tags: EPC, E-mode GaN FETs, GaN-on-Si
In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that, as of the end of 2015, it had shipped gallium nitride on ...
Tags: Wolfspeed, Research Triangle Park
Cadence Design Systems is offering complete IC packaging design and analysis solutions for advanced fan-out wafer-level chip scale packaging (WLCSP) and 2.5D interposer-based designs. Designed to accelerate the multi-chip integration for ...
Tags: Cadence Design system, IC, Packaging
X-FAB Silicon Foundries of Erfurt, Germany - a mixed-signal IC, sensor and micro-electro-mechanical systems (MEMS) foundry – has entered wide-bandgap semiconductor production by announcing the availability of silicon carbide (SiC) ...
Tags: SiC MOSFET SiC Schottky barrier diodes SiC power devices