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result for "
AlGaN HEMTs AlGaN HEMTS MBE PECVD
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III-Nitride High-Electron-Mobility Transistors on Flexible Tape
Apr 11, 2016Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...