Appl articles & resources on Made-in-China.com

Regions of Origin for Top 10 Exported Chinese Products in 2014 (4-Digit HS Code)

Apr 1, 2019

Electric App for Line Telephony, Inclcurrline System Automatic Data Processing Machines; Optical Reader, etc Electronic Integrated Circuits and Microassemblies Articles of Jewellery & Parts thereof Liquid Crystal ...

Tags: Electronic Integrated Circuits, Lamps

Integrating InGaAs Well in Ridges on 300mm Silicon

Sep 29, 2016

Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...

Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University

Reducing Laser Diode Optical Leakage with Indium Gallium Nitride Waveguides

Sep 23, 2016

Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...

Tags: IHPP, TopGaN, InGaN, LDs

Indium Gallium Nitride Solar Cells with Positive Temperature Coefficient

Sep 20, 2016

Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...

Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient

Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate

Sep 9, 2016

Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...

Tags: InGaAs, Laser diodes, III-Vs-on-Si

Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes

Aug 26, 2016

University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...

Tags: LAE, GaN, LEDs

Gallium Arsenide Phosphide Solar Cells on Silicon with Record 12% Efficiency

Aug 26, 2016

Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...

Tags: GaAsP solar cells, GaAsP, MBE, MOCVD

Hexagonal Boron Nitride Enables Cost-Effective, Compact Solid-State Detection of Neutron Signals

Aug 19, 2016

A group of Texas Tech University researchers led by professors Hongxing Jiang and Jingyu Lin has developed hexagonal boron nitride semiconductor as a possible low-cost alternative to helium gas detectors in neutron detection ('Realization ...

Tags: Boron nitride, Texas Tech University

Wafer Reclaim for Indium Gallium Aluminium Phosphide Light Emission

Aug 19, 2016

Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...

Tags: ELO, GaAs, InGaAlP

Monolithic Band-Engineered Semi-Polar White Light-Emitting Diode

Aug 12, 2016

University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...

Tags: LED, UCSB

Chemical Lift-off of Full-Wafer Gallium Nitride with Zinc Oxide Interlayer

Aug 10, 2016

Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...

Tags: GaN, HVPE, free-standing wafers

UIUC Uses MOCVD Growth of Cubic GaN on Silicon to Boost Efficiency and Brightness of Green LEDs

Aug 3, 2016

Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...

Tags: Green LEDs, MOCVD

Sodium Flux Route to Free-Standing Gallium Nitride Substrates

Jul 19, 2016

Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...

Tags: Gallium Nitride Substrates, GaN crystal

Dependence of Efficiency Droop on Carrier Density in Non-Polar Samples

Jul 16, 2016

The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...

Tags: Non-Polar Samples, indium gallium nitride

Subwavelength Micro-Disk Lasers on Exact (001) Silicon Substrate

Jun 23, 2016

Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...

Tags: Subwavelength, CMOS-compatible platform

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